View Item 

Show simple item record

Femtosecond-laser-induced delamination and blister formation in thermal oxide films on silicon (100)

dc.contributor.authorMcDonald, Joel P.en_US
dc.contributor.authorMistry, Vanita R.en_US
dc.contributor.authorRay, Katherine E.en_US
dc.contributor.authorYalisove, Steven M.en_US
dc.contributor.authorNees, John A.en_US
dc.contributor.authorMoody, Neville R.en_US
dc.date.accessioned2011-11-15T16:08:22Z
dc.date.available2011-11-15T16:08:22Z
dc.date.issued2006-04-10en_US
dc.identifier.citationMcDonald, Joel P.; Mistry, Vanita R.; Ray, Katherine E.; Yalisove, Steven M.; Nees, John A.; Moody, Neville R. (2006). "Femtosecond-laser-induced delamination and blister formation in thermal oxide films on silicon (100)." Applied Physics Letters 88(15): 153121-153121-3. <http://hdl.handle.net/2027.42/87772>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87772
dc.description.abstractSilicon (100) substrates with thermal oxide films of varying thickness were irradiated with single and multiple 150 fs150fs laser pulses at normal and non-normal incidences. A range of laser fluence was found in which a blister or domelike feature was produced where the oxide film was delaminated from the substrate. At normal and non-normal incidences blister features were observed for samples with 54, 147, and 1200 nm1200nm of thermal oxide. The blister features were analyzed with optical and atomic force microscopy. In addition, the time frame for blister growth was obtained using pump-probe imaging techniques.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleFemtosecond-laser-induced delamination and blister formation in thermal oxide films on silicon (100)en_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering and Center for Ultrafast Optical Science, University of Michigan, 2300 Hayward Street, Ann Arbor, Michigan 48109-2136en_US
dc.contributor.affiliationumCenter for Ultrafast Optical Science, University of Michigan, 1006 Gerstacker Building, 2200 Bonisteel Avenue, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherSandia National Laboratories, P.O. Box 969 MS9409, Livermore, California 94551-0969en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87772/2/153121_1.pdf
dc.identifier.doi10.1063/1.2193777en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceJ. Bonse, S. Baudach, J. Kruger, W. Kautek, and M. Lenzner, Appl. Phys. A: Mater. Sci. Process. 74, 19 (2002).en_US
dc.identifier.citedreferenceH. O. Jeschke, M. E. Garcia, M. Lenzner, J. Bonse, J. Kruger, and W. Kautek, Appl. Surf. Sci. 197-198, 839 (2002).en_US
dc.identifier.citedreferenceB. K. A. Ngoi, K. Venkatakrishnan, E. N. L. Lim, B. Tan, and L. H. K. Koh, Opt. Lasers Eng. 35, 361 (2001).en_US
dc.identifier.citedreferenceJ. Bonse, K. W. Brzezinka, and A. J. Meixner, Appl. Surf. Sci. 221, 215 (2004).en_US
dc.identifier.citedreferenceA. P. Singh, A. Kapoor, K. N. Tripathi, and G. R. Kumar, Opt. Laser Technol. 34, 37 (2002).en_US
dc.identifier.citedreferenceK. Sokolowski-Tinten, J. Bialkowski, A. Cavalleri, D. von der Linde, A. Oparin, J. Meyer-ter-Vehn, and S. I. Anisimov, Phys. Rev. Lett. 81, 224 (1998).en_US
dc.identifier.citedreferenceA. J. Pedraza, S. Jesse, Y. F. Guan, and J. D. Fowlkes, J. Mater. Res. 16, 3599 (2001).en_US
dc.identifier.citedreferenceA. P. Joglekar, H. Liu, G. J. Spooner, E. Meyhofer, G. Mourou, and A. J. Hunt, Appl. Phys. B: Lasers Opt. 77, 25 (2003).en_US
dc.identifier.citedreferenceT. Q. Jia, Z. Z. Xu, R. X. Li, D. H. Feng, X. X. Li, C. F. Cheng, H. Y. Sun, N. S. Xu, and H. Z. Wang, J. Appl. Phys. 95, 5166 (2004).en_US
dc.identifier.citedreferenceC. B. Schaffer, A. Brodeur, and E. Mazur, Meas. Sci. Technol. 12, 1784 (2001).en_US
dc.identifier.citedreferenceJ. R. Serrano and D. G. Cahill, J. Appl. Phys. 92, 7606 (2002).en_US
dc.identifier.citedreferenceJ. R. Serrano and D. G. Cahill, Microscale Thermophys. Eng. 9, 155 (2005).en_US
dc.identifier.citedreferenceK. Xiao, Z. S. Guan, G. J. Wang, L. Jiang, D. B. Zhu, and Y. R. Wang, Appl. Phys. Lett. 85, 1934 (2004).en_US
dc.identifier.citedreferenceH. Y. Yu, C. Kim, and S. C. Sanday, Thin Solid Films 196, 229 (1991).en_US
dc.identifier.citedreferenceD. von der Linde and K. Sokolowskit-Tinten, Appl. Surf. Sci. 154, 1 (2000).en_US
dc.identifier.citedreferenceB. Rethfeld, K. Sokolowski-Tinten, D. Von der Linde, and S. I. Anisimov, Appl. Phys. A: Mater. Sci. Process. 79, 767 (2004).en_US
dc.identifier.citedreferenceK. Sokolowski-Tinten, J. Bialkowski, A. Cavalleri, D. von der Linde, A. Oparin, J. Meyer-ter-Vehn, and S. I. Anisimov, Phys. Rev. Lett. 81, 224 (1998).en_US
dc.identifier.citedreferenceA. P. Joglekar, H. Liu, G. J. Spooner, E. Meyhofer, G. Mourou, and A. J. Hunt, Appl. Phys. B: Lasers Opt. 77, 25 (2003).en_US
dc.identifier.citedreferenceJ. W. Hutchinson and Z. Suo, Adv. Appl. Mech. 29, 63 (1992).en_US
dc.identifier.citedreferenceD. B. Marshall and A. G. Evans, J. Appl. Phys. 56, 2632 (1984).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Name:
153121_1.pdf
Size:
286.0KB
Format:
PDF
View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.