Femtosecond-laser-induced delamination and blister formation in thermal oxide films on silicon (100)
dc.contributor.author | McDonald, Joel P. | en_US |
dc.contributor.author | Mistry, Vanita R. | en_US |
dc.contributor.author | Ray, Katherine E. | en_US |
dc.contributor.author | Yalisove, Steven M. | en_US |
dc.contributor.author | Nees, John A. | en_US |
dc.contributor.author | Moody, Neville R. | en_US |
dc.date.accessioned | 2011-11-15T16:08:22Z | |
dc.date.available | 2011-11-15T16:08:22Z | |
dc.date.issued | 2006-04-10 | en_US |
dc.identifier.citation | McDonald, Joel P.; Mistry, Vanita R.; Ray, Katherine E.; Yalisove, Steven M.; Nees, John A.; Moody, Neville R. (2006). "Femtosecond-laser-induced delamination and blister formation in thermal oxide films on silicon (100)." Applied Physics Letters 88(15): 153121-153121-3. <http://hdl.handle.net/2027.42/87772> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87772 | |
dc.description.abstract | Silicon (100) substrates with thermal oxide films of varying thickness were irradiated with single and multiple 150 fs150fs laser pulses at normal and non-normal incidences. A range of laser fluence was found in which a blister or domelike feature was produced where the oxide film was delaminated from the substrate. At normal and non-normal incidences blister features were observed for samples with 54, 147, and 1200 nm1200nm of thermal oxide. The blister features were analyzed with optical and atomic force microscopy. In addition, the time frame for blister growth was obtained using pump-probe imaging techniques. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Femtosecond-laser-induced delamination and blister formation in thermal oxide films on silicon (100) | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering and Center for Ultrafast Optical Science, University of Michigan, 2300 Hayward Street, Ann Arbor, Michigan 48109-2136 | en_US |
dc.contributor.affiliationum | Center for Ultrafast Optical Science, University of Michigan, 1006 Gerstacker Building, 2200 Bonisteel Avenue, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationother | Sandia National Laboratories, P.O. Box 969 MS9409, Livermore, California 94551-0969 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87772/2/153121_1.pdf | |
dc.identifier.doi | 10.1063/1.2193777 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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