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Synthesis and ferroelectric properties of epitaxial BiFeO3BiFeO3 thin films grown by sputtering
dc.contributor.authorDas, R. R.en_US
dc.contributor.authorKim, D. M.en_US
dc.contributor.authorBaek, Seung-Hyuben_US
dc.contributor.authorEom, Chang-Beomen_US
dc.contributor.authorZavaliche, F.en_US
dc.contributor.authorYang, S. Y.en_US
dc.contributor.authorRamesh, Ramamoorthyen_US
dc.contributor.authorChen, Y. B.en_US
dc.contributor.authorPan, Xiaoqingen_US
dc.contributor.authorKe, X.en_US
dc.contributor.authorRzchowski, M. S.en_US
dc.contributor.authorStreiffer, S. K.en_US
dc.date.accessioned2011-11-15T16:08:25Z
dc.date.available2011-11-15T16:08:25Z
dc.date.issued2006-06-12en_US
dc.identifier.citationDas, R. R.; Kim, D. M.; Baek, S. H.; Eom, C. B.; Zavaliche, F.; Yang, S. Y.; Ramesh, R.; Chen, Y. B.; Pan, X. Q.; Ke, X.; Rzchowski, M. S.; Streiffer, S. K. (2006). "Synthesis and ferroelectric properties of epitaxial BiFeO3BiFeO3 thin films grown by sputtering." Applied Physics Letters 88(24): 242904-242904-3. <http://hdl.handle.net/2027.42/87775>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87775
dc.description.abstractWe have grown epitaxial BiFeO3BiFeO3 thin films with smooth surfaces on (001), (101), and (111) SrTiO3SrTiO3 substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO3BiFeO3 thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO3BiFeO3 on high miscut (4°) (001) SrTiO3SrTiO3, which attributes to a relatively high value of remanent polarization ( ∼ 71 μC/cm2)(∼71μC∕cm2). Films grown on low miscut (0.8°) SrTiO3SrTiO3 have a small amount of impure phase α-Fe2O3α-Fe2O3 which contributes to lower the polarization values ( ∼ 63 μC/cm2)(∼63μC∕cm2). The BiFeO3BiFeO3 films grown on (101) and (111) SrTiO3SrTiO3 exhibited remanent polarizations of 86 and 98 μC/cm298μC∕cm2, respectively.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleSynthesis and ferroelectric properties of epitaxial BiFeO3BiFeO3 thin films grown by sputteringen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherDepartment of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706en_US
dc.contributor.affiliationotherDepartment of Materials Science and Engineering, University of California, Berkeley, California 94720en_US
dc.contributor.affiliationotherDepartment of Physics, University of Wisconsin–Madison, Madison, Wisconsin 53706en_US
dc.contributor.affiliationotherMaterials Science Division, Argonne National Laboratory, Argonne, Illinois 60439en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87775/2/242904_1.pdf
dc.identifier.doi10.1063/1.2213347en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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