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Solution-processed nickel tetrabenzoporphyrin thin-film transistors

dc.contributor.authorShea, Patrick B.en_US
dc.contributor.authorKanicki, Jerzyen_US
dc.contributor.authorPattison, Lisa R.en_US
dc.contributor.authorPetroff, Pierreen_US
dc.contributor.authorKawano, Manamien_US
dc.contributor.authorYamada, Hirokoen_US
dc.contributor.authorOno, Noboruen_US
dc.date.accessioned2011-11-15T16:08:28Z
dc.date.available2011-11-15T16:08:28Z
dc.date.issued2006-08-01en_US
dc.identifier.citationShea, Patrick B.; Kanicki, Jerzy; Pattison, Lisa R.; Petroff, Pierre; Kawano, Manami; Yamada, Hiroko; Ono, Noboru (2006). "Solution-processed nickel tetrabenzoporphyrin thin-film transistors." Journal of Applied Physics 100(3): 034502-034502-7. <http://hdl.handle.net/2027.42/87777>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87777
dc.description.abstractWe describe nickel tetrabenzoporphyrin (NiTBP) as a solution-processible organic semiconductor. Whereas porphyrins in an unmodified state are typically planar and insoluble, a precursor synthetic route (NiCP) was used to deposit thin films via solution. Amorphous, insulating thin films of NiCP were deposited, and thermally converted to polycrystalline, semiconducting NiTBP. Films were studied using optical absorption and microscopy, atomic force microscopy, and x-ray diffraction. Highly concentrated NiCP was shown to form large, needle-shaped crystals drop-cast from solution. NiTBP thin-film field-effect transistors fabricated from spun-cast films demonstrated charge-carrier field-effect mobilities on the order of 0.1 and 0.2 cm2/V s0.2cm2∕Vs and accumulation threshold voltages of −19−19 and −13−13, in the linear and saturation regimes, respectively.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleSolution-processed nickel tetrabenzoporphyrin thin-film transistorsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumOrganic and Molecular Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherDepartment of Materials Science and Engineering, The University of California, Santa Barbara, California 93106en_US
dc.contributor.affiliationotherDepartment of Chemistry in the Faculty of Science, Ehime University, Bunkyo-cho 2-5, Matsuyama 790-8577, Japanen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87777/2/034502_1.pdf
dc.identifier.doi10.1063/1.2220641en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.identifier.citedreferenceR. W. I. de Boer, A. F. Stassen, M. F. Craciun, C. L. Mulder, A. Molinari, S. Rogge, and A. F. Morpurgo, Appl. Phys. Lett. 86, 262109 (2005).en_US
dc.identifier.citedreferenceJ. Zhang, H. Wang, X. J. Yan, J. Wang, J. W. Shi, and D. H. Yan, Adv. Mater. (Weinheim, Ger.) 17, 1191 (2005).en_US
dc.identifier.citedreferenceZ. Bao, A. J. Lovinger, and A. Dodabalapur, Appl. Phys. Lett. 69, 3066 (1996).en_US
dc.identifier.citedreferenceK. Xiao, Y. Q. Liu, G. Yu, and D. B. Zhu, Synth. Met. 137, 991 (2003).en_US
dc.identifier.citedreferenceR. Zeis, T. Siegrist, and C. Kloc, Appl. Phys. Lett. 86, 022103 (2005).en_US
dc.identifier.citedreferenceG. Guillaud, R. Madru, M. A. Sadoun, and M. Maitrot, J. Appl. Phys. 66, 4554 (1989).en_US
dc.identifier.citedreferenceG. Guillaud, R. B. Chaabane, C. Jouve, and M. Gamoudi, Thin Solid Films 258, 279 (1995).en_US
dc.identifier.citedreferenceR. B. Chaabane, A. Ltaief, C. Dridi, H. Rahmouni, A. Bouazizi, and H. B. Ouada, Thin Solid Films 427, 371 (2003).en_US
dc.identifier.citedreferenceC. Clarisse, M. Riou, M. Gauneau, and M. Le Contellec, Electron. Lett. 24, 674 (1988).en_US
dc.identifier.citedreferenceA. R. Brown, C. P. Jarrett, D. M. de Leeuw, and M. Matters, Synth. Met. 88, 37 (1997).en_US
dc.identifier.citedreferenceA. R. Brown, A. Pomp, D. M. de Leeuw, D. B. M. Klaasen, and E. E. Havinga, J. Appl. Phys. 79, 2136 (1996).en_US
dc.identifier.citedreferenceP. T. Herwig and K. Müllen, Adv. Mater. (Weinheim, Ger.) 11, 480 (1999).en_US
dc.identifier.citedreferenceA. Afzali, C. D. Dimitrakopoulos, and T. L. Breen, J. Am. Chem. Soc. 124, 8812 (2002).en_US
dc.identifier.citedreferenceA. Afzali, C. D. Dimitrakopoulos, and T. O. Graham, Adv. Mater. (Weinheim, Ger.) 15, 2066 (2003).en_US
dc.identifier.citedreferenceM. M. Payne, J. H. Delcamp, S. R. Parkin, and J. E. Anthony, Org. Lett. 6, 1609 (2004).en_US
dc.identifier.citedreferenceS. Aramaki, Y. Sakai, and N. Ono, Appl. Phys. Lett. 84, 2085 (2004a).en_US
dc.identifier.citedreferenceS. Aramaki, Y. Sakai, R. Yoshiyama, K. Sugiyama, N. Ono, and J. Mizuguchi, Proc. SPIE 5522, 27 (2004).en_US
dc.identifier.citedreferenceS. Aramaki and J. Mizuguchi, Acta Crystallogr. E59, o1556 (2003).en_US
dc.identifier.citedreferenceP. B. Shea, J. Kanicki, and N. Ono, J. Appl. Phys. 98, 014503 (2005).en_US
dc.identifier.citedreferenceS. Ito, T. Murashima, H. Uno, and N. Ono, Chem. Commun. (Cambridge) 1998, 1661.en_US
dc.identifier.citedreferenceS. Ito, N. Ochi, T. Murashima, H. Uno, and N. Ono, Heterocycles 52, 399 (2000).en_US
dc.identifier.citedreferenceY. Shimizu, Z. Shen, T. Okujima, H. Uno, and N. Ono, Chem. Commun. (Cambridge) 2004, 374.en_US
dc.identifier.citedreferenceO. S. Finikova, A. V. Cheprakov, I. P. Beletskaya, P. J. Carroll, and S. A. Vinogradov, J. Org. Chem. 69, 522 (2004).en_US
dc.identifier.citedreferenceG. E. Engel, S. Wilke, K. D. M. Harris, and F. J. J. Leusen, J. Appl. Crystallogr. 32, 1169 (1999).en_US
dc.identifier.citedreferenceR. A. Young, The Rietveld Method, IUCr Monographies of Crystallography 5 (Oxford University Press, Oxford, 1993).en_US
dc.identifier.citedreferenceD. A. Van Veldhuizen and G. B. Lamont, Evol. Comput. 8, 125 (2000).en_US
dc.identifier.citedreferenceE. B. Fleischer, C. K. Miller, and L. E. Webb, J. Am. Chem. Soc. 86, 2342 (1964).en_US
dc.identifier.citedreferenceE. B. Fleischer, Acc. Chem. Res. 3, 105 (1970).en_US
dc.identifier.citedreferenceW. Jentzen, I. Turowska-Tyrk, W. R. Scheidt, and J. A. Shelnutt, Inorg. Chem. 35, 3559 (1996).en_US
dc.identifier.citedreferenceM. W. Renner, L. R. Furenlid, K. M. Barkigia, and J. Fajer, J. Phys. IV 7, 661 (1997).en_US
dc.identifier.citedreferenceM. S. Liao, J. D. Watts, and M. J. Huang, J. Phys. Chem. A 109, 11996 (2005).en_US
dc.identifier.citedreferenceX.-Z. Song, W. Jentzen, L. Jaquinod, R. G. Khoury, C. J. Medforth, S.-L. Jia, J.-G. Ma, K. M. Smith, and J. A. Shelnutt, Inorg. Chem. 37, 2117 (1998).en_US
dc.identifier.citedreferenceM.-S. Liao and S. Scheiner, J. Chem. Phys. 117, 205 (2002).en_US
dc.identifier.citedreferenceH.-H. Tsai and M. C. Simpson, J. Phys. Chem. A 108, 1224 (2004).en_US
dc.identifier.citedreferenceS. Cromer, P. Hambright, J. Grodkowski, and P. Neta, J. Porphyr. Phthalocyanines 1, 45 (1997).en_US
dc.identifier.citedreferenceR. A. Birnstead, M. J. Crossley, and N. S. Hush, Inorg. Chem. 30, 1259 (1991).en_US
dc.identifier.citedreferenceThe Porphyrin Handbook, edited by K. M. Kadish, K. M. Smith, and R. Guilard (Academic, New York, 1999).en_US
dc.identifier.citedreferenceX. Zhou, A. Ren, J. Feng, and X. Liu, Can. J. Phys. 82, 19 (2004).en_US
dc.identifier.citedreferenceL. Edwards, D. H. Dolphin, M. Gouterman, and A. D. Adler, J. Mol. Spectrosc. 38, 16 (1971).en_US
dc.identifier.citedreferenceC. J. Schramm, R. P. Scaringe, D. R. Stojakovic, B. M. Hoffman, J. A. Ibers, and T. J. Marks, J. Am. Chem. Soc. 102, 6702 (1980).en_US
dc.identifier.citedreferenceP. K. Bhattacharya, Semiconductor Optoelectronic Devices, 2nd ed. (Prentice Hall, Upper Saddle River, NJ, 1997).en_US
dc.identifier.citedreferenceB. Saleh and M. Teich, Fundamentals of Photonics, 1st ed. (Wiley-Interscience, New York, 1991).en_US
dc.identifier.citedreferenceJ. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures 1st ed. (Cambridge University Press, Cambridge, 2003).en_US
dc.identifier.citedreferenceJ. Kanicki and S. Martin, in Printed Organic and Molecular Electronics, edited by D. Gamota, P. Brazis, K. Kalyanasundaram, and J. Zhang (Kluwer Academic, Dordrecht, 2004).en_US
dc.identifier.citedreferenceG. Horowitz, Adv. Mater. (Weinheim, Ger.) 10, 365 (1998).en_US
dc.identifier.citedreferenceS. Scheinert and G. Paasch, Phys. Status Solidi A 201, 1263 (2004).en_US
dc.identifier.citedreferenceH. Sirringhaus, Adv. Mater. (Weinheim, Ger.) 17, 2411 (2005).en_US
dc.identifier.citedreferenceJ. Z. Wang, J. F. Chang, and H. Sirringhaus, Appl. Phys. Lett. 87, 083503 (2005).en_US
dc.identifier.citedreferenceG. Merckel and A. Rolland, Solid-State Electron. 39, 1231 (1996).en_US
dc.identifier.citedreferenceM. C. Hamilton, S. Martin, and J. Kanicki, Chem. Mater. 16, 4699 (2004).en_US
dc.identifier.citedreferenceP. Stallinga, H. Gomes, F. Biscarini, M. Murgia, and D. de Leeuw, J. Appl. Phys. 96, 5277 (2004).en_US
dc.identifier.citedreferenceA. Rolland, J. Richard, J. P. Kleider, and D. Mencaraglia, J. Electrochem. Soc. 140, 3679 (1993).en_US
dc.identifier.citedreferenceS. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).en_US
dc.identifier.citedreferenceM. Kiguchi, M. Nakayama, K. Fujiwara, K. Ueno, T. Shimada, and K. Saiki, Jpn. J. Appl. Phys., Part 2 42, L1408 (2003).en_US
dc.identifier.citedreferenceP. B. Shea, A. R. Johnson, J. Kanicki, and N. Ono, IEEE Trans. Electron Devices 52, 1497 (2005).en_US
dc.identifier.citedreferenceA. Kohno, T. Sameshima, N. Sano, M. Sekiya, and M. Hara, IEEE Trans. Electron Devices 42, 251 (1995).en_US
dc.identifier.citedreferenceM. C. Hamilton, S. Martin, and J. Kanicki, IEEE Trans. Electron Devices 51, 877 (2004).en_US
dc.identifier.citedreferenceJ. Martinsen, L. J. Pace, T. E. Phillips, B. M. Hoffman, and J. A. Ibers, J. Am. Chem. Soc. 104, 83 (1982).en_US
dc.identifier.citedreferenceF. W. Kutzler and D. E. Ellis, J. Chem. Phys. 84, 1033 (1986).en_US
dc.owningcollnamePhysics, Department of


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