Solution-processed nickel tetrabenzoporphyrin thin-film transistors
dc.contributor.author | Shea, Patrick B. | en_US |
dc.contributor.author | Kanicki, Jerzy | en_US |
dc.contributor.author | Pattison, Lisa R. | en_US |
dc.contributor.author | Petroff, Pierre | en_US |
dc.contributor.author | Kawano, Manami | en_US |
dc.contributor.author | Yamada, Hiroko | en_US |
dc.contributor.author | Ono, Noboru | en_US |
dc.date.accessioned | 2011-11-15T16:08:28Z | |
dc.date.available | 2011-11-15T16:08:28Z | |
dc.date.issued | 2006-08-01 | en_US |
dc.identifier.citation | Shea, Patrick B.; Kanicki, Jerzy; Pattison, Lisa R.; Petroff, Pierre; Kawano, Manami; Yamada, Hiroko; Ono, Noboru (2006). "Solution-processed nickel tetrabenzoporphyrin thin-film transistors." Journal of Applied Physics 100(3): 034502-034502-7. <http://hdl.handle.net/2027.42/87777> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87777 | |
dc.description.abstract | We describe nickel tetrabenzoporphyrin (NiTBP) as a solution-processible organic semiconductor. Whereas porphyrins in an unmodified state are typically planar and insoluble, a precursor synthetic route (NiCP) was used to deposit thin films via solution. Amorphous, insulating thin films of NiCP were deposited, and thermally converted to polycrystalline, semiconducting NiTBP. Films were studied using optical absorption and microscopy, atomic force microscopy, and x-ray diffraction. Highly concentrated NiCP was shown to form large, needle-shaped crystals drop-cast from solution. NiTBP thin-film field-effect transistors fabricated from spun-cast films demonstrated charge-carrier field-effect mobilities on the order of 0.1 and 0.2 cm2/V s0.2cm2∕Vs and accumulation threshold voltages of −19−19 and −13−13, in the linear and saturation regimes, respectively. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Solution-processed nickel tetrabenzoporphyrin thin-film transistors | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Organic and Molecular Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationother | Department of Materials Science and Engineering, The University of California, Santa Barbara, California 93106 | en_US |
dc.contributor.affiliationother | Department of Chemistry in the Faculty of Science, Ehime University, Bunkyo-cho 2-5, Matsuyama 790-8577, Japan | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87777/2/034502_1.pdf | |
dc.identifier.doi | 10.1063/1.2220641 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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