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Micron-scale organic thin film transistors with conducting polymer electrodes patterned by polymer inking and stamping
dc.contributor.authorLi, Dawenen_US
dc.contributor.authorGuo, L. Jayen_US
dc.date.accessioned2011-11-15T16:08:31Z
dc.date.available2011-11-15T16:08:31Z
dc.date.issued2006-02-06en_US
dc.identifier.citationLi, Dawen; Guo, L Jay (2006). "Micron-scale organic thin film transistors with conducting polymer electrodes patterned by polymer inking and stamping." Applied Physics Letters 88(6): 063513-063513-3. <http://hdl.handle.net/2027.42/87779>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87779
dc.description.abstractWe report organic thin film transistors (OTFTs) with conductive polymer poly (3,4-ethylenedioxythiophene)/poly(4-styrenesulphonate) (PEDOT) electrodes that are fabricated by a simple polymer inking and stamping technique. An OTFT channel length of 2 μm2μm has been achieved. This patterning technique is a purely additive process, which does not affect the functionality of the conductive polymers, and is fully compatible for patterning on a flexible substrate. Electrical characteristics of top contact (TC) pentacene TFTs with PEDOT electrodes is superior to those with gold electrodes due to a lower carrier injection barrier. Extracted contact resistance shows that the channel length of TC OTFTs can be further reduced to increase the drain current.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMicron-scale organic thin film transistors with conducting polymer electrodes patterned by polymer inking and stampingen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87779/2/063513_1.pdf
dc.identifier.doi10.1063/1.2168669en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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