ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3(Ba,Sr)TiO3 gate insulators
dc.contributor.author | Siddiqui, J. J. | en_US |
dc.contributor.author | Cagin, Emine | en_US |
dc.contributor.author | Chen, D. Y. | en_US |
dc.contributor.author | Phillips, J. D. | en_US |
dc.date.accessioned | 2011-11-15T16:08:33Z | |
dc.date.available | 2011-11-15T16:08:33Z | |
dc.date.issued | 2006-05-22 | en_US |
dc.identifier.citation | Siddiqui, J.; Cagin, E.; Chen, D.; Phillips, J. D. (2006). "ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3(Ba,Sr)TiO3 gate insulators." Applied Physics Letters 88(21): 212903-212903-3. <http://hdl.handle.net/2027.42/87781> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87781 | |
dc.description.abstract | The electrical characteristics of ZnO thin-film transistors with high-kk (Ba,Sr)TiO3(Ba,Sr)TiO3 gate dielectrics are presented. The ZnO and (Ba,Sr)TiO3(Ba,Sr)TiO3 thin films were deposited on Pt, exhibiting polycrystalline characteristics. The thin-film devices demonstrated transistor behavior over the range of 0–10 V0–10V with a stable threshold voltage of approximately 1.2 V1.2V. The field effect mobility, subthreshold slope, and on/off ratio were measured to be 2.3 cm2 V−1 s−12.3cm2V−1s−1, 0.25 V/decade0.25V∕decade, and 1.5×1081.5×108, respectively. The measured transistor performance characteristics suggest that ZnO/(Ba,Sr)TiO3ZnO∕(Ba,Sr)TiO3 structures are well suited for both polycrystalline thin-film transistors for display applications and future higher performance transistors based on single crystal ZnO. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3(Ba,Sr)TiO3 gate insulators | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87781/2/212903_1.pdf | |
dc.identifier.doi | 10.1063/1.2204574 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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