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Organic light-emitting device on a scanning probe cantilever

dc.contributor.authorAn, Kwang H.en_US
dc.contributor.authorO’Connor, Brendanen_US
dc.contributor.authorPipe, Kevin P.en_US
dc.contributor.authorZhao, Yiyingen_US
dc.contributor.authorShtein, Maxen_US
dc.date.accessioned2011-11-15T16:08:46Z
dc.date.available2011-11-15T16:08:46Z
dc.date.issued2006-09-11en_US
dc.identifier.citationAn, Kwang H.; O’Connor, Brendan; Pipe, Kevin P.; Zhao, Yiying; Shtein, Max (2006). "Organic light-emitting device on a scanning probe cantilever." Applied Physics Letters 89(11): 111117-111117-3. <http://hdl.handle.net/2027.42/87792>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87792
dc.description.abstractOrganic light-emitting devices (OLEDs) were fabricated on scanning probe cantilevers using a combination of thermally evaporated molecular organic compounds and metallic electrodes. Ion beam milling was used to define the emissive region in the shape of a ring having a diameter of less than 5 μm5μm and a narrow width. Stable light emission was observed from the device at forward bias, with a current-voltage response similar to that of archetypal OLEDs. Based on this device, a novel electrically pumped scanning optical microscopy tool is suggested.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleOrganic light-emitting device on a scanning probe cantileveren_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Mechanical Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2125en_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2125en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87792/2/111117_1.pdf
dc.identifier.doi10.1063/1.2353816en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceE. Betzig and J. K. Trautman, Science 257, 189 (1992).en_US
dc.identifier.citedreferenceR. Bachelot, G. Lerondel, S. Blaize, S. Aubert, A. Bruyant, and P. Royer, Microsc. Res. Tech. 64, 441 (2004).en_US
dc.identifier.citedreferenceW. Dickson, A. Stashkevitch, J. Ben Youssef, S. Takahashi, and A. V. Zayats, Opt. Commun. 250, 126 (2005).en_US
dc.identifier.citedreferenceD. Mulin, C. Girard, G. C. Des Francs, M. Spajer, and D. Courjon, J. Microsc. 202, 110 (2001).en_US
dc.identifier.citedreferenceS. I. Bozhevolnyi, V. S. Volkov, T. Sondergaard, A. Boltasseva, P. I. Borel, and M. Kristensen, Phys. Rev. B 66, 235204 (2002).en_US
dc.identifier.citedreferenceM. Denyer, R. Micheletto, K. Nakajima, M. Hara, and S. Okazaki, J. Nanosci. Nanotechnol. 3, 496 (2003).en_US
dc.identifier.citedreferenceE. Betzig and R. J. Chichester, Science 262, 1422 (1993).en_US
dc.identifier.citedreferenceP. Grabiec, J. Radojewski, M. Zaborowski, K. Domanski, T. Schenkel, and I. W. Rangelow, J. Vac. Sci. Technol. B 22, 16 (2004).en_US
dc.identifier.citedreferenceC. Mihalcea, W. Scholz, S. Werner, S. Munster, E. Oesterschulze, and R. Kassing, Appl. Phys. Lett. 68, 3531 (1996).en_US
dc.identifier.citedreferenceS. S. Choi, M. S. Song, D. W. Kim, and M. J. Park, Appl. Phys. A: Mater. Sci. Process. 79, 1189 (2004).en_US
dc.identifier.citedreferenceM. Sasaki, K. Tanaka, and K. Hane, Jpn. J. Appl. Phys., Part 1 39, 7150 (2000).en_US
dc.identifier.citedreferenceS. Heisig, O. Rudow, and E. Oesterschulze, Appl. Phys. Lett. 77, 1071 (2000).en_US
dc.identifier.citedreferenceH. Kroemer, J. Cryst. Growth 81, 193 (1987).en_US
dc.identifier.citedreferenceN. Iwata, T. Wakayama, and S. Yamada, Sens. Actuators, A 111, 26 (2004).en_US
dc.identifier.citedreferenceP. E. Burrows, Y. Zhang, E. I. Haskal, and S. R. Forrest, Appl. Phys. Lett. 61, 2417 (1992).en_US
dc.identifier.citedreferenceS. R. Forrest, Chem. Rev. (Washington, D.C.) 97, 1793 (1997).en_US
dc.identifier.citedreferenceD. Suh and H. H. Lee, J. Vac. Sci. Technol. B 22, 1123 (2004).en_US
dc.identifier.citedreferenceH. Yamamoto, J. Wilkinson, J. P. Long, K. Bussman, J. A. Christodoulides, and Z. H. Kafafi, Nano Lett. 5, 2485 (2005).en_US
dc.identifier.citedreferenceF. A. Boroumand, P. W. Fry, and D. G. Lidzey, Nano Lett. 5, 67 (2005).en_US
dc.identifier.citedreferenceA. Wang, L. Kymissis, V. Bulovic, and A. I. Akinwande, IEEE Trans. Electron Devices 53, 9 (2006).en_US
dc.identifier.citedreferenceE. Artukovic, M. Kaempgen, D. S. Hecht, S. Roth, and G. Gruner, Nano Lett. 5, 757 (2005).en_US
dc.identifier.citedreferenceM. A. Baldo and S. R. Forrest, Phys. Rev. B 64, 085201 (2001).en_US
dc.identifier.citedreferenceH. Shiba, M. Haraguchi, and M. Fukui, J. Phys. Soc. Jpn. 63, 1400 (1994).en_US
dc.identifier.citedreferenceR. Zia, M. D. Selker, and M. L. Brongersma, Phys. Rev. B 71, 165431 (2005).en_US
dc.identifier.citedreferenceP. Andrew and W. L. Barnes, Science 306, 1002 (2004).en_US
dc.identifier.citedreferenceU. C. Fischer and D. W. Pohl, Phys. Rev. Lett. 62, 458 (1989).en_US
dc.identifier.citedreferenceA. A. Shoustikov, Y. J. You, and M. E. Thompson, IEEE J. Sel. Top. Quantum Electron. 4, 3 (1998).en_US
dc.owningcollnamePhysics, Department of


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