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White organic light-emitting device based on a compound fluorescent-phosphor-sensitized-fluorescent emission layer

dc.contributor.authorKanno, Hiroshien_US
dc.contributor.authorSun, Yiruen_US
dc.contributor.authorForrest, Stephen R.en_US
dc.date.accessioned2011-11-15T16:08:53Z
dc.date.available2011-11-15T16:08:53Z
dc.date.issued2006-10-02en_US
dc.identifier.citationKanno, Hiroshi; Sun, Yiru; Forrest, Stephen R. (2006). "White organic light-emitting device based on a compound fluorescent-phosphor-sensitized-fluorescent emission layer." Applied Physics Letters 89(14): 143516-143516-3. <http://hdl.handle.net/2027.42/87798>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87798
dc.description.abstractThe authors demonstrate a combination fluorescent and phosphor-sensitized-fluorescent white organic light-emitting device (WOLED), employing the conductive host material, 4,4′4,4′-bis(9-ethyl-3-carbazovinylene)-1,1′1,1′-biphenyl, doped with the phosphorescent green, and the fluorescent red and blue emitters, fac-tris(2-phenylpyridinato-N,C2′N,C2′) iridium (III), 4-(dicyanomethylene)-2-t2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H4H-pyran, and 4,4′4,4′-bis (9-ethy-3-carbazolvinylene)-1-1′1-1′-biphenyl, respectively. Although two fluorescent dopants are employed along with only a single phosphor, this simple structure can, in principle, achieve 100% internal quantum efficiency. In the prototype, the phosphor-sensitized WOLED exhibits total external quantum and power efficiencies of ηext,tot = 13.1±0.5%ηext,tot=13.1±0.5% and ηp,tot = 20.2±0.7 lm/Wηp,tot=20.2±0.7lm∕W, respectively, at a luminance of 800 cd/m2800cd∕m2 with Commission Internationale de L’Eclairage chromaticity coordinates of (x = 0.38(x=0.38, y = 0.42y=0.42) and a color rendering index of 79.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleWhite organic light-emitting device based on a compound fluorescent-phosphor-sensitized-fluorescent emission layeren_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109; Department of Physics, University of Michigan, Ann Arbor, Michigan 48109; and Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherPrinceton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08544 and Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87798/2/143516_1.pdf
dc.identifier.doi10.1063/1.2357038en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceB. W. D’Andrade, R. J. Holmes, and S. R. Forrest, Adv. Mater. (Weinheim, Ger.) 16, 624 (2004).en_US
dc.identifier.citedreferenceH. Kanno, Y. Sun, and S. R. Forrest, Appl. Phys. Lett. 86, 263502 (2005).en_US
dc.identifier.citedreferenceC.-H. Kim and J. Shinar, Appl. Phys. Lett. 80, 2201 (2002).en_US
dc.identifier.citedreferenceS. Tokito, T. Iijima, T. Tsuzuki, and F. Sato, Appl. Phys. Lett. 83, 2459 (2003).en_US
dc.identifier.citedreferenceY. Xu, J. Peng, Y. Mo, Q. Hou, and Y. Cao, Appl. Phys. Lett. 86, 163502 (2005).en_US
dc.identifier.citedreferenceY. Sun, N. Giebink, B. Ma, M. E. Thompson, and S. R. Forrest, SPIE Organic Light Emitting Materials and Devices IX, San Diego, 1 August 2005, Paper No. 5937-86.en_US
dc.identifier.citedreferenceY. Sun, N. C. Giebink, H. Kanno, B. Ma, M. E. Thompson, and S. R. Forrest, Nature (London) 440, 908 (2006).en_US
dc.identifier.citedreferenceM. A. Baldo, M. E. Thompson, and S. R. Forrest, Nature (London) 403, 750 (2000).en_US
dc.identifier.citedreferenceB. W. D’Andrade, M. A. Baldo, C. Adachi, J. Brooks, M. E. Thompson, and S. R. Forrest, Appl. Phys. Lett. 79, 1045 (2001).en_US
dc.identifier.citedreferenceG. Cheng, F. Li, Y. Duan, J. Feng, S. Liu, S. Qiu, D. Lin, Y. Ma, and S. T. Lee, Appl. Phys. Lett. 82, 4224 (2003).en_US
dc.identifier.citedreferenceG. Lei, L. Wang, and Y. Qiu, Appl. Phys. Lett. 85, 5403 (2004).en_US
dc.identifier.citedreferenceY. Zhang, G. Cheng, Y. Zhao, J. Hou, and S. Liu, Appl. Phys. Lett. 86, 011112 (2005).en_US
dc.identifier.citedreferenceK. O. Cheon and J. Shinar, J. Appl. Phys. 81, 1738 (2002).en_US
dc.identifier.citedreferenceC. Hosokawa, H. Tokailin, H. Higashi, and T. Kusumoto, J. Appl. Phys. 78, 5831 (1995).en_US
dc.identifier.citedreferenceM. A. Baldo and S. R. Forrest, Phys. Rev. B 62, 10967 (2000).en_US
dc.identifier.citedreferenceN. C. Giebink, Y. Sun, and S. R. Forrest, Org. Electron. 7, 375 (2006).en_US
dc.identifier.citedreferenceS. R. Forrest, D. D. C. Bradley, and M. E. Thompson, Adv. Mater. (Weinheim, Ger.) 15, 1043 (2003).en_US
dc.owningcollnamePhysics, Department of


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