Epitaxially grown MnAs/GaAsMnAs∕GaAs lateral spin valves

Saha, Dipankar; Holub, M.; Bhattacharya, Pallab K.; Liao, Y. C.

Epitaxially grown MnAs/GaAsMnAs∕GaAs lateral spin valves

dc.contributor.author	Saha, Dipankar	en_US
dc.contributor.author	Holub, M.	en_US
dc.contributor.author	Bhattacharya, Pallab K.	en_US
dc.contributor.author	Liao, Y. C.	en_US
dc.date.accessioned	2011-11-15T16:08:56Z
dc.date.available	2011-11-15T16:08:56Z
dc.date.issued	2006-10-02	en_US
dc.identifier.citation	Saha, D.; Holub, M.; Bhattacharya, P.; Liao, Y. C. (2006). "Epitaxially grown MnAs/GaAsMnAs∕GaAs lateral spin valves." Applied Physics Letters 89(14): 142504-142504-3. <http://hdl.handle.net/2027.42/87800>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/87800
dc.description.abstract	The authors report magnetoresistance of lateral spin valves fabricated from an epitaxially grown MnAs/GaAsMnAs∕GaAs heterostructure and utilizing a Schottky tunnel barrier for efficient spin injection. A coercive field difference between the two ferromagnetic MnAs contacts is obtained by a difference in aspect ratio. Peak magnetoresistances of 3.6% at 10 K10K and 1.1% at 125 K125K are measured for a 0.5 μm0.5μm channel length spin valve. The authors observe an exponential decay of the peak magnetoresistance with increasing channel length, which is indicative of diffusive spin transport. The magnetoresistance increases with increasing bias and with decreasing temperature. Control experiments have been carried out to confirm the spin-valve effect.	en_US
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Epitaxially grown MnAs/GaAsMnAs∕GaAs lateral spin valves	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/87800/2/142504_1.pdf
dc.identifier.doi	10.1063/1.2358944	en_US
dc.identifier.source	Applied Physics Letters	en_US
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dc.owningcollname	Physics, Department of

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