Growth and characteristics of ultralow threshold 1.45 μm1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs
dc.contributor.author | Mi, Zetian | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Yang, J. | en_US |
dc.date.accessioned | 2011-11-15T16:08:58Z | |
dc.date.available | 2011-11-15T16:08:58Z | |
dc.date.issued | 2006-10-09 | en_US |
dc.identifier.citation | Mi, Z.; Bhattacharya, P.; Yang, J. (2006). "Growth and characteristics of ultralow threshold 1.45 μm1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs." Applied Physics Letters 89(15): 153109-153109-3. <http://hdl.handle.net/2027.42/87801> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87801 | |
dc.description.abstract | The molecular beam epitaxial growth and characteristics of 1.45 μm1.45μm metamorphic InAs quantum dot tunnel injection lasers on GaAs have been studied. Under optimized growth conditions, the quantum dots exhibit photoluminescence linewidths ∼ 30 meV∼30meV and high intensity at room temperature. The lasers are characterized by ultralow threshold current (63 A/cm2)(63A∕cm2), large frequency response (f−3 dB = 8 GHz)(f−3dB=8GHz), and near-zero αα parameter and chirp. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Growth and characteristics of ultralow threshold 1.45 μm1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87801/2/153109_1.pdf | |
dc.identifier.doi | 10.1063/1.2358847 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
dc.identifier.citedreference | H. Temkin, D. Coblentz, R. A. Logan, J. P. van der Ziel, T. Tanbun-Ek, R. D. Yadvish, and A. M. Sergent, Appl. Phys. Lett. 62, 2402 (1993). | en_US |
dc.identifier.citedreference | P. J. A. Thijs, T. Dongen, L. F. Tiemeijer, and J. J. M. Binsma, J. Lightwave Technol. 12, 28 (1994). | en_US |
dc.identifier.citedreference | S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris, IEEE J. Sel. Top. Quantum Electron. 11, 1089 (2005). | en_US |
dc.identifier.citedreference | Z. C. Niu, S. Y. Zhang, H. Q. Ni, D. H. Wu, H. Zhao, H. L. Peng, Y. Q. Xu, S. Y. Li, Z. H. He, Z. Q. Ren, Q. Han, X. H. Yang, Y. Du, and R. H. Wu, Appl. Phys. Lett. 87, 231121 (2005). | en_US |
dc.identifier.citedreference | R. J. Potter, N. Balkan, H. Carrère, A. Arnoult, E. Bedel, and X. Marie, Appl. Phys. Lett. 82, 3400 (2003). | en_US |
dc.identifier.citedreference | P. G. Eliseev, H. Li, T. Liu, T. C. Newell, L. F. Lester, and K. J. Malloy, J. Sci. Food. Agric. 7, 135 (2001). | en_US |
dc.identifier.citedreference | Z. Mi, P. Bhattacharya, and S. Fathpour, Appl. Phys. Lett. 86, 153109 (2005). | en_US |
dc.identifier.citedreference | S. M. Kim, Y. Wang, M. Keever, and J. S. Harris, IEEE Photonics Technol. Lett. 16, 377 (2004). | en_US |
dc.identifier.citedreference | N. N. Ledentsov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil’ev, E. S. Semenova, M. V. Maximov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, V. M. Ustinov, and D. Bimberg, Electron. Lett. 39, 1126 (2003). | en_US |
dc.identifier.citedreference | A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, A. P. Vasil’ev, E. V. Nikitina, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, Yu. G. Musikhin, M. V. Maksimov, N. N. Ledentsov, V. M. Ustinov, and Zh. I. Alferov, Semiconductors 37, 1119 (2003). | en_US |
dc.identifier.citedreference | Y.-C. Xin, L. G. Vaughn, L. R. Dawson, A. Stintz, Y. Lin, L. F. Lester, and D. L. Huffaker, J. Appl. Phys. 94, 2133 (2003). | en_US |
dc.identifier.citedreference | I. Tångring, S. M. Wang, Q. F. Gu, Y. Q. Wei, M. Sadeghi, A. Larsson, Q. X. Zhao, M. N. Akram, and J. Berggren, Appl. Phys. Lett. 86, 171902 (2005). | en_US |
dc.identifier.citedreference | J. Shieh, M. Chang, Y. Cheng, and J. Chyi, Appl. Phys. Lett. 82, 210 (1997). | en_US |
dc.identifier.citedreference | W. E. Hoke, P. J. Lemonias, J. J. Mosca, P. S. Lyman, A. Torabi, P. F. Marsh, R. A. McTaggart, S. M. Lardizabal, and K. Hetzler, J. Vac. Sci. Technol. B 17, 1131 (1999). | en_US |
dc.identifier.citedreference | D. J. Dunstan, P. Kidd, P. F. Fewster, N. L. Andrew, R. Grey, J. P. R. David, L. González, Y. González, A. Sacedón, and F. González-Sanz, Appl. Phys. Lett. 65, 839 (1994). | en_US |
dc.identifier.citedreference | K. Baskar, T. Soga, T. Jimbo, and M. Umeno, Appl. Phys. Lett. 80, 4112 (1996). | en_US |
dc.identifier.citedreference | N. N. Ledentsov, A. R. Kovsh, V. A. Shchukin, S. S. Mikhrin, L. L. Krestnikov, A. V. Kozhukhov, L. Ya. Karachinsky, M. V. Maximov, I. I. Novikov, Yu. M. Shernyakov, I. P. Soshnikov, A. E. Zhukov, E. L. Portnoi, V. M. Ustinov, D. Gerthsen, P. Bhattacharya, N. F. Zakharov, P. Werner, F. Hopfer, M. Kuntz, and D. Bimberg, Proc. SPIE 5624, 335 (2005). | en_US |
dc.identifier.citedreference | P. Bhattacharya, S. Ghosh, S. Pradhan, J. Singh, Z.-K. Wu, J. Urayama, K. Kim, and T. B. Norris, IEEE J. Quantum Electron. 39, 952 (2003). | en_US |
dc.identifier.citedreference | S. Fathpour, Z. Mi, and P. Bhattacharya, J. Phys. D 38, 2103 (2005). | en_US |
dc.identifier.citedreference | P. Bhattacharya, J. Singh, H. Yoon, X. K. Zhang, A. Gutierrez-Aitken, and Y. L. Lam, IEEE J. Quantum Electron. 32, 1620 (1996). | en_US |
dc.identifier.citedreference | H. Y. Liu, I. R. Sellers, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, K. M. Groom, M. Gutiérrez, M. Hopkinson, J. S. Ng, J. P. R. David, and R. Beanland, Appl. Phys. Lett. 85, 704 (2004). | en_US |
dc.identifier.citedreference | S. Melnik and G. Huyet, Opt. Express 14, 2950 (2006). | en_US |
dc.owningcollname | Physics, Department of |
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