Growth and characteristics of ultralow threshold 1.45 μm1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs

Mi, Zetian; Bhattacharya, Pallab K.; Yang, J.

Growth and characteristics of ultralow threshold 1.45 μm1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs

dc.contributor.author	Mi, Zetian	en_US
dc.contributor.author	Bhattacharya, Pallab K.	en_US
dc.contributor.author	Yang, J.	en_US
dc.date.accessioned	2011-11-15T16:08:58Z
dc.date.available	2011-11-15T16:08:58Z
dc.date.issued	2006-10-09	en_US
dc.identifier.citation	Mi, Z.; Bhattacharya, P.; Yang, J. (2006). "Growth and characteristics of ultralow threshold 1.45 μm1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs." Applied Physics Letters 89(15): 153109-153109-3. <http://hdl.handle.net/2027.42/87801>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/87801
dc.description.abstract	The molecular beam epitaxial growth and characteristics of 1.45 μm1.45μm metamorphic InAs quantum dot tunnel injection lasers on GaAs have been studied. Under optimized growth conditions, the quantum dots exhibit photoluminescence linewidths ∼ 30 meV∼30meV and high intensity at room temperature. The lasers are characterized by ultralow threshold current (63 A/cm2)(63A∕cm2), large frequency response (f−3 dB = 8 GHz)(f−3dB=8GHz), and near-zero αα parameter and chirp.	en_US
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Growth and characteristics of ultralow threshold 1.45 μm1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/87801/2/153109_1.pdf
dc.identifier.doi	10.1063/1.2358847	en_US
dc.identifier.source	Applied Physics Letters	en_US
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dc.owningcollname	Physics, Department of

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