Ferromagnetic interlayer exchange coupling in semiconductor SbCrTe/Sb2Te3/SbCrTeSbCrTe∕Sb2Te3∕SbCrTe trilayer structures

Zhou, Zhenhua; Chien, Yi-Jiunn; Uher, Ctirad

Ferromagnetic interlayer exchange coupling in semiconductor SbCrTe/Sb2Te3/SbCrTeSbCrTe∕Sb2Te3∕SbCrTe trilayer structures

dc.contributor.author	Zhou, Zhenhua	en_US
dc.contributor.author	Chien, Yi-Jiunn	en_US
dc.contributor.author	Uher, Ctirad	en_US
dc.date.accessioned	2011-11-15T16:09:13Z
dc.date.available	2011-11-15T16:09:13Z
dc.date.issued	2006-12-04	en_US
dc.identifier.citation	Zhou, Zhenhua; Chien, Yi-Jiunn; Uher, Ctirad (2006). "Ferromagnetic interlayer exchange coupling in semiconductor SbCrTe/Sb2Te3/SbCrTeSbCrTe∕Sb2Te3∕SbCrTe trilayer structures." Applied Physics Letters 89(23): 232501-232501-3. <http://hdl.handle.net/2027.42/87813>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/87813
dc.description.abstract	Semiconductor trilayer structures with ferromagnetic Sb2−xCrxTe3Sb2−xCrxTe3 layers separated by a nonmagnetic Sb2Te3Sb2Te3 layer of different thickness have been fabricated by molecular beam epitaxy. Ferromagnetic out-of-plane exchange coupling between the SbCrTe layers was found and the coupling strength, which can be represented by a saturation field HSHS, depends on both the Sb2Te3Sb2Te3 spacer thickness and temperature.	en_US
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Ferromagnetic interlayer exchange coupling in semiconductor SbCrTe/Sb2Te3/SbCrTeSbCrTe∕Sb2Te3∕SbCrTe trilayer structures	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Department of Physics, University of Michigan, Ann Arbor, Michigan 48109	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/87813/2/232501_1.pdf
dc.identifier.doi	10.1063/1.2398905	en_US
dc.identifier.source	Applied Physics Letters	en_US
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dc.owningcollname	Physics, Department of

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