Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors
dc.contributor.author | Chan, Paddy K. L. | en_US |
dc.contributor.author | Pipe, Kevin P. | en_US |
dc.contributor.author | Qin, Guoxuan | en_US |
dc.contributor.author | Ma, Zhenqiang | en_US |
dc.date.accessioned | 2011-11-15T16:09:14Z | |
dc.date.available | 2011-11-15T16:09:14Z | |
dc.date.issued | 2006-12-04 | en_US |
dc.identifier.citation | Chan, Paddy K. L.; Pipe, Kevin P.; Qin, Guoxuan; Ma, Zhenqiang (2006). "Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors." Applied Physics Letters 89(23): 233521-233521-3. <http://hdl.handle.net/2027.42/87814> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87814 | |
dc.description.abstract | By generating high resolution two dimensional temperature images of electronic devices and linking heat dissipation to electrical current, the authors demonstrate that thermoreflectance measurements employing a charge-coupled device can provide a useful and nondestructive method for profiling current density in electronic devices. Here they apply this method to high power SiGe heterojunction bipolar transistors (HBTs) integrated in a commercial SiGe bipolar complementary metal-oxide-semiconductor platform, measuring the current carried by each subcell and quantifying current collapse under high-bias operation. They show that current hogging for a HBT with two emitter subcells can lead to one subcell carrying 81% of the total current. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109-2125 | en_US |
dc.contributor.affiliationother | Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87814/2/233521_1.pdf | |
dc.identifier.doi | 10.1063/1.2402947 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
dc.identifier.citedreference | G. Wang, H. C. Yuan, and Z. Ma, IEEE Electron Device Lett. 27, 371 (2006). | en_US |
dc.identifier.citedreference | B. P. Yan, C. C. Hsu, X. Q. Wang, and E. S. Yang, Appl. Phys. Lett. 85, 4505 (2004). | en_US |
dc.identifier.citedreference | N. Chand, R. Fischer, T. Henderson, J. Klem, W. Kopp, and H. Morkoç, Appl. Phys. Lett. 45, 1086 (1984). | en_US |
dc.identifier.citedreference | Y. Zhu, J. Kwynam, M. Yangura, M. Hasegawa, T. Hasegawa, Y. Eguchi, Y. Amano, E. Suematsu, K. Sakuno, N. Matsumoto, H. Sato, and N. Hasizume, IEEE Trans. Electron Devices 48, 2640 (2001). | en_US |
dc.identifier.citedreference | K. Y. Huang, Y. Li, and C. P. Lee, Microelectron. Eng. 75, 137 (2004). | en_US |
dc.identifier.citedreference | W. Liu, IEEE Trans. Electron Devices 42, 1033 (1995). | en_US |
dc.identifier.citedreference | W. Liu and A. Yukselm, IEEE Trans. Electron Devices 42, 358 (1995). | en_US |
dc.identifier.citedreference | J. W. Pomeroy, M. Kuball, D. J. Wallis, A. M. Keir, K. P. Hilton, R. S. Balmer, M. J. Uren, T. Martin, and P. J. Heard, Appl. Phys. Lett. 87, 103508 (2005). | en_US |
dc.identifier.citedreference | J. W. Pomeroy, M. Kuball, M. J. Uren, K. P. Hilton, R. S. Balmer, and T. Martin, Appl. Phys. Lett. 88, 023507 (2006). | en_US |
dc.identifier.citedreference | D. Lüerßen, J. A. Hudgings, P. M. Mayer, and R. J. Ram, 21st Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE, San Jose, 2005), p. 253. | en_US |
dc.identifier.citedreference | P. K. L. Chan, K. P. Pipe, Z. Mi, J. Yang, P. Bhattacharya, and D. Lüerßen, Appl. Phys. Lett. 89, 011110 (2006). | en_US |
dc.identifier.citedreference | J. S. Yuan, SiGe, GaAs, and InP Heterojunction Bipolar Transistors (Wiley, New York, 1999), Vol. 1, Chap. 7, p. 304. | en_US |
dc.identifier.citedreference | K. Kurishima, S. Yamahata, H. Nakajima, H. Ito, and N. Watanabe, IEEE Electron Device Lett. 19, 303 (1998). | en_US |
dc.owningcollname | Physics, Department of |
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