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Thin-film ferromagnetic semiconductors based on Sb2−xVxTe3Sb2−xVxTe3 with TCTC of 177 K177K

dc.contributor.authorZhou, Zhenhuaen_US
dc.contributor.authorChien, Yi-Jiunnen_US
dc.contributor.authorUher, Ctiraden_US
dc.date.accessioned2011-11-15T16:09:28Z
dc.date.available2011-11-15T16:09:28Z
dc.date.issued2005-09-12en_US
dc.identifier.citationZhou, Zhenhua; Chien, Yi-Jiunn; Uher, Ctirad (2005). "Thin-film ferromagnetic semiconductors based on Sb2−xVxTe3Sb2−xVxTe3 with TCTC of 177 K177K." Applied Physics Letters 87(11): 112503-112503-3. <http://hdl.handle.net/2027.42/87825>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87825
dc.description.abstractThin-film ferromagnetic semiconductors Sb2−xVxTe3Sb2−xVxTe3 with the Curie temperature as high as 177 K177K were prepared on sapphire (0001) substrates by molecular-beam epitaxy. Films of Sb2−xVxTe3Sb2−xVxTe3 with xx up to 0.35 display robust, out-of-plane ferromagnetic ordering that depends on the concentration of vanadium in the structure. The Curie temperature was determined from magnetization measurements and Arrott plots. Ferromagnetic order is manifested by hysteresis loops observed in magnetization, magnetoresistivity, and the anomalous Hall effect.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleThin-film ferromagnetic semiconductors based on Sb2−xVxTe3Sb2−xVxTe3 with TCTC of 177 K177Ken_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Physics, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87825/2/112503_1.pdf
dc.identifier.doi10.1063/1.2045561en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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