Thin-film ferromagnetic semiconductors based on Sb2−xVxTe3Sb2−xVxTe3 with TCTC of 177 K177K
dc.contributor.author | Zhou, Zhenhua | en_US |
dc.contributor.author | Chien, Yi-Jiunn | en_US |
dc.contributor.author | Uher, Ctirad | en_US |
dc.date.accessioned | 2011-11-15T16:09:28Z | |
dc.date.available | 2011-11-15T16:09:28Z | |
dc.date.issued | 2005-09-12 | en_US |
dc.identifier.citation | Zhou, Zhenhua; Chien, Yi-Jiunn; Uher, Ctirad (2005). "Thin-film ferromagnetic semiconductors based on Sb2−xVxTe3Sb2−xVxTe3 with TCTC of 177 K177K." Applied Physics Letters 87(11): 112503-112503-3. <http://hdl.handle.net/2027.42/87825> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87825 | |
dc.description.abstract | Thin-film ferromagnetic semiconductors Sb2−xVxTe3Sb2−xVxTe3 with the Curie temperature as high as 177 K177K were prepared on sapphire (0001) substrates by molecular-beam epitaxy. Films of Sb2−xVxTe3Sb2−xVxTe3 with xx up to 0.35 display robust, out-of-plane ferromagnetic ordering that depends on the concentration of vanadium in the structure. The Curie temperature was determined from magnetization measurements and Arrott plots. Ferromagnetic order is manifested by hysteresis loops observed in magnetization, magnetoresistivity, and the anomalous Hall effect. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Thin-film ferromagnetic semiconductors based on Sb2−xVxTe3Sb2−xVxTe3 with TCTC of 177 K177K | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87825/2/112503_1.pdf | |
dc.identifier.doi | 10.1063/1.2045561 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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