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Quantum dot formation on a strain-patterned epitaxial thin film
dc.contributor.authorWise, S. M.en_US
dc.contributor.authorLowengrub, J. S.en_US
dc.contributor.authorKim, J. S.en_US
dc.contributor.authorThornton, K.en_US
dc.contributor.authorVoorhees, P. W.en_US
dc.contributor.authorJohnson, W. C.en_US
dc.date.accessioned2011-11-15T16:09:31Z
dc.date.available2011-11-15T16:09:31Z
dc.date.issued2005-09-26en_US
dc.identifier.citationWise, S. M.; Lowengrub, J. S.; Kim, J. S.; Thornton, K.; Voorhees, P. W.; Johnson, W. C. (2005). "Quantum dot formation on a strain-patterned epitaxial thin film." Applied Physics Letters 87(13): 133102-133102-3. <http://hdl.handle.net/2027.42/87827>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87827
dc.description.abstractWe model the effect of substrate strain patterning on the self-assembly of quantum dots (QDs). When the surface energy is isotropic, we demonstrate that strain patterning via embedded substrate inclusions may result in ordered, self-organized QD arrays. However, for systems with strong cubic surface energy anisotropy, the same patterning does not readily lead to an ordered array of pyramids at long times. We conclude that the form of the surface energy anisotropy strongly influences the manner in which QDs self-assemble into regular arrays.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleQuantum dot formation on a strain-patterned epitaxial thin filmen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136en_US
dc.contributor.affiliationotherMathematics Department, University of California, Irvine, California 92697-3875en_US
dc.contributor.affiliationotherMaterials Science and Engineering Department, Northwestern University, Evanston, Illinois 60208-3108en_US
dc.contributor.affiliationotherDepartment of Materials Science and Engineering, University of Virginia, Charlottesvile, Virginia 22904-4745en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87827/2/133102_1.pdf
dc.identifier.doi10.1063/1.2061852en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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