Formation and evolution of epitaxial Co5Ge7Co5Ge7 film on Ge (001) surface by solid-state reaction in an in situ ultrahigh-vacuum transmission electron microscope
dc.contributor.author | Sun, H. P. | en_US |
dc.contributor.author | Chen, Y. B. | en_US |
dc.contributor.author | Pan, Xiaoqing | en_US |
dc.contributor.author | Chi, D. Z. | en_US |
dc.contributor.author | Nath, R. | en_US |
dc.contributor.author | Foo, Y. L. | en_US |
dc.date.accessioned | 2011-11-15T16:09:43Z | |
dc.date.available | 2011-11-15T16:09:43Z | |
dc.date.issued | 2005-11-21 | en_US |
dc.identifier.citation | Sun, H. P.; Chen, Y. B.; Pan, X. Q.; Chi, D. Z.; Nath, R.; Foo, Y. L. (2005). "Formation and evolution of epitaxial Co5Ge7Co5Ge7 film on Ge (001) surface by solid-state reaction in an in situ ultrahigh-vacuum transmission electron microscope." Applied Physics Letters 87(21): 211909-211909-3. <http://hdl.handle.net/2027.42/87837> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87837 | |
dc.description.abstract | A thin metallic cobalt (Co) layer was deposited on a single-crystal Ge (001) surface at room temperature by the electron-beam evaporation of a pure Co metal source in an ultrahigh-vacuum transmission electron microscope. The formation and epitaxial growth of a cobalt germanide Co5Ge7Co5Ge7 phase on the Ge (001) surface was studied in situ by gradually heating the sample from room temperature to ∼ 350 °C∼350°C. The occurrence of an epitaxial hexagonal-close-packed Co and the reaction between Co and Ge were observed at ∼ 225 °C∼225°C. After annealing at ∼ 300 °C∼300°C for 26.5 h, a continuous epitaxial Co5Ge7Co5Ge7 film formed on the Ge (001) substrate. With further annealing at a higher temperature, the continuous Co5Ge7Co5Ge7 layer broke up and formed three-dimensional islands in order to relieve the strain energy in the epitaxial Co5Ge7Co5Ge7 layer. Two epitaxial relationships between Co5Ge7Co5Ge7 and Ge, i.e., Co5Ge7〈110〉(001)//Ge〈100〉(001)Co5Ge7〈110〉(001)∕∕Ge〈100〉(001) and Co5Ge7〈001〉(110)//Ge〈100〉(001)Co5Ge7〈001〉(110)∕∕Ge〈100〉(001) were found by electron diffraction. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Formation and evolution of epitaxial Co5Ge7Co5Ge7 film on Ge (001) surface by solid-state reaction in an in situ ultrahigh-vacuum transmission electron microscope | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 | en_US |
dc.contributor.affiliationother | Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87837/2/211909_1.pdf | |
dc.identifier.doi | 10.1063/1.2135387 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
dc.identifier.citedreference | International Technology Roadmap for Semiconductors (ITRS), http://public.itrs.net. | en_US |
dc.identifier.citedreference | S.C. Jain and M. Willander, Silicon-Germanium Strained Layers and Heterostructures, Semiconductors and Semimetals Vol. 74 (Academic, New York, 2003). | en_US |
dc.identifier.citedreference | M. J. Lee, C. W. Leitz, Z. Cheng, A. J. Pitera, T. Langdo, M. T. Currie, G. Taraschi, and E. A. Fitzgerald, Appl. Phys. Lett. 79, 3344 (2001). | en_US |
dc.identifier.citedreference | D. S. Yu, C. H. Huang, A. Chin, C. X. Zhu, M. F. Li, B. J. Cho, and D.–L. Kwong, IEEE Electron Device Lett. 25, 138 (2004). | en_US |
dc.identifier.citedreference | S. L. Zhang and M. Ostling, Crit. Rev. Solid State Mater. Sci. 28, 1 (2003). | en_US |
dc.identifier.citedreference | S. P. Ashburn, M. C. Ozturk, G. Harris, and D. M. Maher, J. Appl. Phys. 74, 4455 (1993). | en_US |
dc.identifier.citedreference | K. E. Mello, S. P. Murarka, T.–M. Lu, and S. L. Lee, J. Appl. Phys. 81, 7261 (1997). | en_US |
dc.identifier.citedreference | Y. F. Hsieh, L. J. Chen, E. D. Marshall, and S. S. Lau, Appl. Phys. Lett. 51, 1588 (1987). | en_US |
dc.identifier.citedreference | I. Goldfarb and G. A. D. Briggs, J. Mater. Res. 16, 744 (2001). | en_US |
dc.identifier.citedreference | H. P. Sun, Y. B. Chen, X. Q. Pan, and D. Z. Chi, Appl. Phys. Lett. 86, 071904 (2005). | en_US |
dc.identifier.citedreference | K. Prabhakaran and T. Ogino, Appl. Surf. Sci. 100, 518 (1996). | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.