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Highly ordered CdS nanoparticle arrays on silicon substrates and photoluminescence properties

dc.contributor.authorLei, Y.en_US
dc.contributor.authorChim, W. K.en_US
dc.contributor.authorSun, H. P.en_US
dc.contributor.authorWilde, G.en_US
dc.date.accessioned2011-11-15T16:09:49Z
dc.date.available2011-11-15T16:09:49Z
dc.date.issued2005-03-07en_US
dc.identifier.citationLei, Y.; Chim, W. K.; Sun, H. P.; Wilde, G. (2005). "Highly ordered CdS nanoparticle arrays on silicon substrates and photoluminescence properties." Applied Physics Letters 86(10): 103106-103106-3. <http://hdl.handle.net/2027.42/87842>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87842
dc.description.abstractHighly ordered cadmium sulphide (CdS) nanoparticle (NP) arrays were fabricated on silicon (Si) substrates using ultrathin alumina membranes as evaporation masks. The CdS NPs are polycrystalline and are composed of ultrasmall closely packed nanocrystallites. These crystallites increase in size as the duration of the CdS evaporation process increases. When the thickness of the NPs changes from about 10 to 50 nm, the size of the crystallites increases from about 5–14 to 20–40 nm. Photoluminescence measurements on the CdS NP arrays show a strong emission spectrum with two subbands that are attributed to band-edge and surface-defect emissions. The peak position and width of the band-edge emission band are closely related to the size of the crystallites in the CdS NPs.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleHighly ordered CdS nanoparticle arrays on silicon substrates and photoluminescence propertiesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherForschungszentrum Karlsruhe, Institut für Nanotechnologie, Karlsruhe, Germany 76021 and Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576, Singaporeen_US
dc.contributor.affiliationotherSingapore-MIT Alliance and Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singaporeen_US
dc.contributor.affiliationotherForschungszentrum Karlsruhe, Institut für Nanotechnologie, Karlsruhe, Germany 76021en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87842/2/103106_1.pdf
dc.identifier.doi10.1063/1.1869545en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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