Highly ordered CdS nanoparticle arrays on silicon substrates and photoluminescence properties
dc.contributor.author | Lei, Y. | en_US |
dc.contributor.author | Chim, W. K. | en_US |
dc.contributor.author | Sun, H. P. | en_US |
dc.contributor.author | Wilde, G. | en_US |
dc.date.accessioned | 2011-11-15T16:09:49Z | |
dc.date.available | 2011-11-15T16:09:49Z | |
dc.date.issued | 2005-03-07 | en_US |
dc.identifier.citation | Lei, Y.; Chim, W. K.; Sun, H. P.; Wilde, G. (2005). "Highly ordered CdS nanoparticle arrays on silicon substrates and photoluminescence properties." Applied Physics Letters 86(10): 103106-103106-3. <http://hdl.handle.net/2027.42/87842> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87842 | |
dc.description.abstract | Highly ordered cadmium sulphide (CdS) nanoparticle (NP) arrays were fabricated on silicon (Si) substrates using ultrathin alumina membranes as evaporation masks. The CdS NPs are polycrystalline and are composed of ultrasmall closely packed nanocrystallites. These crystallites increase in size as the duration of the CdS evaporation process increases. When the thickness of the NPs changes from about 10 to 50 nm, the size of the crystallites increases from about 5–14 to 20–40 nm. Photoluminescence measurements on the CdS NP arrays show a strong emission spectrum with two subbands that are attributed to band-edge and surface-defect emissions. The peak position and width of the band-edge emission band are closely related to the size of the crystallites in the CdS NPs. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Highly ordered CdS nanoparticle arrays on silicon substrates and photoluminescence properties | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationother | Forschungszentrum Karlsruhe, Institut für Nanotechnologie, Karlsruhe, Germany 76021 and Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576, Singapore | en_US |
dc.contributor.affiliationother | Singapore-MIT Alliance and Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore | en_US |
dc.contributor.affiliationother | Forschungszentrum Karlsruhe, Institut für Nanotechnologie, Karlsruhe, Germany 76021 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87842/2/103106_1.pdf | |
dc.identifier.doi | 10.1063/1.1869545 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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