High-speed 1.3 μm1.3μm tunnel injection quantum-dot lasers
dc.contributor.author | Mi, Zetian | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Fathpour, S. | en_US |
dc.date.accessioned | 2011-11-15T16:09:56Z | |
dc.date.available | 2011-11-15T16:09:56Z | |
dc.date.issued | 2005-04-11 | en_US |
dc.identifier.citation | Mi, Z.; Bhattacharya, P.; Fathpour, S. (2005). "High-speed 1.3 μm1.3μm tunnel injection quantum-dot lasers." Applied Physics Letters 86(15): 153109-153109-3. <http://hdl.handle.net/2027.42/87848> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87848 | |
dc.description.abstract | 1.3 μm1.3μm tunnel injection quantum-dot lasers are demonstrated. The laser heterostructures are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are pp doped to optimize the gain. The lasers are characterized by Jth = 180 A/cm2Jth=180A∕cm2, T0 = ∞T0=∞, dg/dn ≈ 1×10−14 cm2dg∕dn≈1×10−14cm2, f−3dB = 11 GHzf−3dB=11GHz, chirp of 0.1 Å0.1Å, and zero αα parameter. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | High-speed 1.3 μm1.3μm tunnel injection quantum-dot lasers | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87848/2/153109_1.pdf | |
dc.identifier.doi | 10.1063/1.1899230 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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