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High-speed 1.3 μm1.3μm tunnel injection quantum-dot lasers

dc.contributor.authorMi, Zetianen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorFathpour, S.en_US
dc.date.accessioned2011-11-15T16:09:56Z
dc.date.available2011-11-15T16:09:56Z
dc.date.issued2005-04-11en_US
dc.identifier.citationMi, Z.; Bhattacharya, P.; Fathpour, S. (2005). "High-speed 1.3 μm1.3μm tunnel injection quantum-dot lasers." Applied Physics Letters 86(15): 153109-153109-3. <http://hdl.handle.net/2027.42/87848>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87848
dc.description.abstract1.3 μm1.3μm tunnel injection quantum-dot lasers are demonstrated. The laser heterostructures are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are pp doped to optimize the gain. The lasers are characterized by Jth = 180 A/cm2Jth=180A∕cm2, T0 = ∞T0=∞, dg/dn ≈ 1×10−14 cm2dg∕dn≈1×10−14cm2, f−3dB = 11 GHzf−3dB=11GHz, chirp of 0.1 Å0.1Å, and zero αα parameter.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleHigh-speed 1.3 μm1.3μm tunnel injection quantum-dot lasersen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87848/2/153109_1.pdf
dc.identifier.doi10.1063/1.1899230en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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