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NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study
dc.contributor.authorNath, R.en_US
dc.contributor.authorSoo, C. W.en_US
dc.contributor.authorBoothroyd, C. B.en_US
dc.contributor.authorYeadon, M.en_US
dc.contributor.authorChi, D. Z.en_US
dc.contributor.authorSun, H. P.en_US
dc.contributor.authorChen, Y. B.en_US
dc.contributor.authorPan, Xiaoqingen_US
dc.contributor.authorFoo, Y. L.en_US
dc.date.accessioned2011-11-15T16:10:03Z
dc.date.available2011-11-15T16:10:03Z
dc.date.issued2005-05-16en_US
dc.identifier.citationNath, R.; Soo, C. W.; Boothroyd, C. B.; Yeadon, M.; Chi, D. Z.; Sun, H. P.; Chen, Y. B.; Pan, X. Q.; Foo, Y. L. (2005). "NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study." Applied Physics Letters 86(20): 201908-201908-3. <http://hdl.handle.net/2027.42/87854>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87854
dc.description.abstractWe use an ultrahigh-vacuum transmission-electron microscopy, equipped with an electron-beam evaporator directed at a heating stage in the pole piece, to follow the reaction pathway of Ni on Ge(001) substrate at 300 °C. Using reactive deposition, we illustrate that epitaxial orthorhombic NiGe (a = 5.381 Åa=5.381Å, b = 3.428 Åb=3.428Å, and c = 5.811 Åc=5.811Å) phase can be grown directly without the initial formation of metal-rich Ni2GeNi2Ge phase. The epitaxial orientation of the NiGe islands and the underlying Ge(001) substrate were found to be NiGe(01)//Ge(001)NiGe(1¯01)∕∕Ge(001) and NiGe[010]//Ge[110]NiGe[010]∕∕Ge[110].en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleNiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy studyen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136en_US
dc.contributor.affiliationotherInstitute of Materials Research and Engineering, 3 Research Link, Singapore S117602, Singaporeen_US
dc.contributor.affiliationotherInstitute of Materials Research and Engineering, 3 Research Link, Singapore S117602, Singaporeen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87854/2/201908_1.pdf
dc.identifier.doi10.1063/1.1929100en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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