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Low-force contact heating and softening using micromechanical switches in diffusive-ballistic electron-transport transition
dc.contributor.authorJensen, Brian D.en_US
dc.contributor.authorHuang, Kuangweien_US
dc.contributor.authorChow, Linda L. W.en_US
dc.contributor.authorKurabayashi, Katsuoen_US
dc.date.accessioned2011-11-15T16:10:08Z
dc.date.available2011-11-15T16:10:08Z
dc.date.issued2005-01-10en_US
dc.identifier.citationJensen, Brian D.; Huang, Kuangwei; Chow, Linda L.-W.; Kurabayashi, Katsuo (2005). "Low-force contact heating and softening using micromechanical switches in diffusive-ballistic electron-transport transition." Applied Physics Letters 86(2): 023507-023507-3. <http://hdl.handle.net/2027.42/87858>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87858
dc.description.abstractWe demonstrate softening of the gold-to-gold contact in surface micromachined microelectromechanical switches under electrostatic force near 30 μN30μN, which results from the heating of contact asperities sustaining electron transport. A bias potential that causes the switch contacts to soften is measured for initial contact resistance varying between 0.5 and 300 Ω300Ω. The asperity sizes in this range are comparable to the electron mean-free path at room temperature. We show that contact spots smaller than the mean-free path require larger bias for softening. Our results can be explained using a model accounting for ballistic electron transport in the contact.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLow-force contact heating and softening using micromechanical switches in diffusive-ballistic electron-transport transitionen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87858/2/023507_1.pdf
dc.identifier.doi10.1063/1.1850191en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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