Show simple item record

Analysis and wafer-level design of a high-order silicon vibration isolator for resonating MEMS devices

dc.contributor.authorYoon, Sang Wonen_US
dc.contributor.authorLee, Sangwooen_US
dc.contributor.authorPerkins, Noel Cen_US
dc.contributor.authorNajafi, Khalilen_US
dc.date.accessioned2012-04-06T20:58:16Z
dc.date.available2012-04-06T20:58:16Z
dc.date.issued2011en_US
dc.identifier.citationYoon, Sang Won; Lee, Sangwoo; Perkins, Noel C; Najafi, Khalil (2011). "Analysis and wafer-level design of a high-order silicon vibration isolator for resonating MEMS devices." Journal of Micromechanics and Microengineering, vol. 21, 1, 015017. <http://hdl.handle.net/2027.42/90793>en_US
dc.identifier.urihttp://stacks.iop.org/0960-1317/21/i=1/a=015017en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/90793
dc.description.abstractThis paper presents the analysis and preliminary design, fabrication, and measurement for mechanical vibration-isolation platforms especially designed for resonating MEMS devices including gyroscopes. Important parameters for designing isolation platforms are specified and the first platform (in designs with cascaded multiple platforms) is crucial for improving vibration-isolation performance and minimizing side-effects on integrated gyroscopes. This isolation platform, made from a thick silicon wafer substrate for an environment-resistant MEMS package, incorporates the functionalities of a previous design including vacuum packaging and thermal resistance with no additional resources. This platform consists of platform mass, isolation beams, vertical feedthroughs, and bonding pads. Two isolation platform designs follow from two isolation beam designs: lateral clamped–clamped beams and vertical torsion beams. The beams function simultaneously as mechanical springs and electrical interconnects. The vibration-isolation platform can yield a multi-dimensional, high-order mechanical low pass filter. The isolation platform possesses eight interconnects within a 12.2 _ 12.2 mm 2 footprint. The contact resistance ranges from 4–11 Ω depending on the beam design. Vibration measurements using a laser-Doppler vibrometer demonstrate that the lateral vibration-isolation platform suppresses external vibration having frequencies exceeding 2.1 kHz.en_US
dc.publisherIOP Publishingen_US
dc.titleAnalysis and wafer-level design of a high-order silicon vibration isolator for resonating MEMS devicesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/90793/1/0960-1317_21_1_015017.pdf
dc.identifier.doi10.1088/0960-1317-21-1-015017en_US
dc.identifier.sourceJournal of Micromechanics and Microengineeringen_US
dc.owningcollnamePhysics, Department of


Files in this item

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe its collections in a way that respects the people and communities who create, use, and are represented in them. We encourage you to Contact Us anonymously if you encounter harmful or problematic language in catalog records or finding aids. More information about our policies and practices is available at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.