P‐143: A Novel Current‐Scaling a‐Si:H TFTs Pixel Electrode Circuit for Active‐Matrix Organic Light‐Emitting Displays
dc.contributor.author | Lin, Yen‐chung | en_US |
dc.contributor.author | Shieh, Han‐ping D. | en_US |
dc.contributor.author | Su, Chia‐chen | en_US |
dc.contributor.author | Lee, Hojin | en_US |
dc.contributor.author | Kanicki, Jerzy | en_US |
dc.date.accessioned | 2012-07-12T17:22:35Z | |
dc.date.available | 2012-07-12T17:22:35Z | |
dc.date.issued | 2005-05 | en_US |
dc.identifier.citation | Lin, Yen‐chung ; Shieh, Han‐ping D. ; Su, Chia‐chen ; Lee, Hojin; Kanicki, Jerzy (2005). "Pâ 143: A Novel Currentâ Scaling aâ Si:H TFTs Pixel Electrode Circuit for Activeâ Matrix Organic Lightâ Emitting Displays." SID Symposium Digest of Technical Papers 36(1). <http://hdl.handle.net/2027.42/92010> | en_US |
dc.identifier.issn | 0097-966X | en_US |
dc.identifier.issn | 2168-0159 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/92010 | |
dc.description.abstract | Hydrogenated amorphous silicon thin‐film transistor (a‐Si:H TFT) pixel electrode circuit with a function of current scaling is proposed for active‐matrix organic light‐emitting displays (AM‐OLEDs). In contrast to the conventional current mirror pixel electrode circuit, in this circuit a high data‐to‐organic light‐emitting device (OLED) current ratio can be achieved, without increasing the a‐Si:H TFT size, by using a cascade structure of storage capacitors. Moreover, the proposed circuit can compensate for the variations of TFT threshold voltage. Simulation results, based on a‐Si:H TFT and OLED experimental data, showed that a data‐to‐OLED current ratio larger than 10 and a fast pixel programming time can be accomplished with the proposed circuit. | en_US |
dc.publisher | Blackwell Publishing Ltd | en_US |
dc.publisher | Wiley Periodicals, Inc. | en_US |
dc.title | P‐143: A Novel Current‐Scaling a‐Si:H TFTs Pixel Electrode Circuit for Active‐Matrix Organic Light‐Emitting Displays | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid‐State Electronics Laboratory, Dept. of EECS, University of Michigan, Ann Arbor, MI, USA | en_US |
dc.contributor.affiliationother | Display Institute, National Chiao Tung University, Hsinchu, Taiwan, 300 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/92010/1/1.2036579.pdf | |
dc.identifier.doi | 10.1889/1.2036579 | en_US |
dc.identifier.source | SID Symposium Digest of Technical Papers | en_US |
dc.identifier.citedreference | C. W. Tang et. al Van Slike, Appl. Phys. Lett., vol. 51, pp. 913 – 915, 1987. | en_US |
dc.identifier.citedreference | C. W. Tang, Inform. Display, vol. 12, no. 10, pp. 16 – 19, 1996. | en_US |
dc.identifier.citedreference | J. H. Burroughes et. al, Nature, vol. 347, pp. 539 – 541, 1990. | en_US |
dc.identifier.citedreference | A. J. Heeger et. al, Opt. Photon. News, vol. 7, no. 8, pp. 23 – 30, 1996. | en_US |
dc.identifier.citedreference | C.C. Wu, et al, Proc. IEDM'96, 1996, pp. 957 – 959. | en_US |
dc.identifier.citedreference | M. Stewart, et al, Proc. IEDM'98, 1998, pp. 871 – 874. | en_US |
dc.identifier.citedreference | T. Shimoda, et al, Proc. Asia Display'98, 1998, pp. 271. | en_US |
dc.identifier.citedreference | R. M. A. Dawson et. al, SID Symposium Digest 29, pp. 11 – 14, 1998. | en_US |
dc.identifier.citedreference | Y. He, R. Hattori et. al, IEEE Electron Device Lett., vol. 21, no. 12, pp. 590 – 592, Dec 2000. | en_US |
dc.identifier.citedreference | Y. He, R. Hattori et. al, IEEE Trans. Electron Devices, vol. 48, no. 7, pp. 1322 – 1325, Jul, 2001. | en_US |
dc.identifier.citedreference | A. Yumoto, et al, Proc. Int. Display Workshop, 2001, pp. 1395 – 1398. | en_US |
dc.identifier.citedreference | J. Lee et. al, IEEE Electron Device Lett., vol. 25, no. 5, pp. 280 – 282, May 2004. | en_US |
dc.identifier.citedreference | M. S. Shur et. al, Mat. Res. Soc. Symp. Proc., vol. 467, pp. 831 – 842, 1997. | en_US |
dc.identifier.citedreference | M. S. Shur et. al, “J. Electrochem. Soc., Vol. 144, No. 8, pp. 2833 – 2839, 1997. | en_US |
dc.identifier.citedreference | C.‐Y. Chen, et al, Proc. 26th Eur. Solid State Dev. Reas. Conf.,1996, pp. 1023 – 1031. | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.