P‐11: DC/AC Electrical Instability of R.F. Sputter Amorphous In‐Ga‐Zn‐O TFTs
dc.contributor.author | Fung, Tze‐ching | en_US |
dc.contributor.author | Abe, Katsumi | en_US |
dc.contributor.author | Kumomi, Hideya | en_US |
dc.contributor.author | Kanicki, Jerzy | en_US |
dc.date.accessioned | 2012-07-12T17:23:04Z | |
dc.date.available | 2012-07-12T17:23:04Z | |
dc.date.issued | 2009-06 | en_US |
dc.identifier.citation | Fung, Tze‐ching ; Abe, Katsumi; Kumomi, Hideya; Kanicki, Jerzy (2009). "Pâ 11: DC/AC Electrical Instability of R.F. Sputter Amorphous Inâ Gaâ Znâ O TFTs." SID Symposium Digest of Technical Papers 40(1). <http://hdl.handle.net/2027.42/92026> | en_US |
dc.identifier.issn | 0097-966X | en_US |
dc.identifier.issn | 2168-0159 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/92026 | |
dc.description.abstract | The paper presents the study of electrical instability of RF sputter amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistor (TFT) induced by negative steady‐state (or D.C.) bias‐temperature‐stress (BTS). Similarly to positive BTS results [8], the stress time evolution of the threshold voltage shift (Δ V th ) induced by negative BTS under different stress voltages and temperatures can all be described by the stretched‐exponential model. for the first time, we also present the results for Δ V th under pulse (or A.C.) BTS. The Δ V th for positive A.C. BTS is found to have a pulse‐period dependence while a huge reduction of Δ V th is found for all negative A. C. BTS results. This might suggest the time for holes to accumulate near the a‐IGZO/ SiO 2 interface is much longer than the time for electrons. The effect of bi‐polar stressing is also discussed. | en_US |
dc.publisher | Blackwell Publishing Ltd | en_US |
dc.publisher | Wiley Periodicals, Inc. | en_US |
dc.title | P‐11: DC/AC Electrical Instability of R.F. Sputter Amorphous In‐Ga‐Zn‐O TFTs | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, 48105 USA | en_US |
dc.contributor.affiliationother | Canon Research Center, Canon Inc., Ohta‐Ku, Tokyo 146‐8501 Japan | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/92026/1/1.3256481.pdf | |
dc.identifier.doi | 10.1889/1.3256481 | en_US |
dc.identifier.source | SID Symposium Digest of Technical Papers | en_US |
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dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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