High‐performance top‐gate a‐Si:H TFTs for AMLCDs
dc.contributor.author | Chiang, Chun‐sung | en_US |
dc.contributor.author | Martin, Sandrine | en_US |
dc.contributor.author | Nahm, Jeong‐yeop | en_US |
dc.contributor.author | Kanicki, Jerzy | en_US |
dc.contributor.author | Ugai, Yasuhiro | en_US |
dc.contributor.author | Yukawa, Teizo | en_US |
dc.contributor.author | Takeuchi, Shu | en_US |
dc.date.accessioned | 2012-07-12T17:24:27Z | |
dc.date.available | 2012-07-12T17:24:27Z | |
dc.date.issued | 1998-05 | en_US |
dc.identifier.citation | Chiang, Chun‐sung ; Martin, Sandrine; Nahm, Jeong‐yeop ; Kanicki, Jerzy; Ugai, Yasuhiro; Yukawa, Teizo; Takeuchi, Shu (1998). "Highâ performance topâ gate aâ Si:H TFTs for AMLCDs." SID Symposium Digest of Technical Papers 29(1). <http://hdl.handle.net/2027.42/92080> | en_US |
dc.identifier.issn | 0097-966X | en_US |
dc.identifier.issn | 2168-0159 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/92080 | |
dc.description.abstract | High‐performance top‐gate hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) structures have been fabricated over a large area from plasma‐enhanced chemical vapor deposition (PECVD) materials. The electrical performances of the top‐gate a‐Si:H TFT (μ FE ≅0.75cm 2 /Vsec, V T ≅3.5V, S ≅0.55V/dec) are comparable to the electrical performances observed for an inverted‐staggered bottom‐gate a‐Si:H TFT. We have shown that the TFT field‐effect mobility first increases with the a‐Si:H thickness, and then decreases for thicker a‐Si:H films. This change of the electrical performances can be associated either with the variation of a‐Si:H microstructure with film thickness during the PECVD processes or a large density of TFT back interface states; it also involves the source/drain parasitic access resistances, especially for thick a‐Si:H layers. | en_US |
dc.publisher | Blackwell Publishing Ltd | en_US |
dc.publisher | Wiley Periodicals, Inc. | en_US |
dc.title | High‐performance top‐gate a‐Si:H TFTs for AMLCDs | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | University of Michigan, Center for Display Technology and Manufacturing, Department of Electrical Engineering and Computer Science, Ann Arbor, MI 48109 | en_US |
dc.contributor.affiliationother | Hosiden and Philips Display Corp. 3‐1, Takatsukadai, 4‐chome, Nishi‐ku, Kobe City, Hyogo, 651‐22, Japan | en_US |
dc.identifier.pmid | 9726003 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/92080/1/1.1833773.pdf | |
dc.identifier.doi | 10.1889/1.1833773 | en_US |
dc.identifier.source | SID Symposium Digest of Technical Papers | en_US |
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dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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