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P‐102: Amorphous Silicon Thin‐Film Transistors‐based Active‐Matrix Organic Light‐Emitting Displays

dc.contributor.authorKim, Joo‐hanen_US
dc.contributor.authorKanicki, Jerzyen_US
dc.date.accessioned2012-07-12T17:25:05Z
dc.date.available2012-07-12T17:25:05Z
dc.date.issued2002-05en_US
dc.identifier.citationKim, Joo‐han ; Kanicki, Jerzy (2002). "Pâ 102: Amorphous Silicon Thinâ Film Transistorsâ based Activeâ Matrix Organic Lightâ Emitting Displays." SID Symposium Digest of Technical Papers 33(1). <http://hdl.handle.net/2027.42/92089>en_US
dc.identifier.issn0097-966Xen_US
dc.identifier.issn2168-0159en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/92089
dc.description.abstractIn this paper, we describe hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT)‐based active‐matrix arrays for active‐matrix organic light‐emitting displays (AM‐OLEDs). The proposed pixel electrode circuits based on three a‐Si:H TFTs can supply a continuous output current for AM‐OLEDs. Each pixel circuit has compensation circuits that can adjust for the OLED and a‐Si:H TFTs electrical characteristics shifts.en_US
dc.publisherBlackwell Publishing Ltden_US
dc.publisherWiley Periodicals, Inc.en_US
dc.titleP‐102: Amorphous Silicon Thin‐Film Transistors‐based Active‐Matrix Organic Light‐Emitting Displaysen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelElectrical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid‐State Electronics Laboratory, Dept. of EECS, The University of Michigan, Ann Arbor, MIen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/92089/1/1.1830416.pdf
dc.identifier.doi10.1889/1.1830416en_US
dc.identifier.sourceSID Symposium Digest of Technical Papersen_US
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dc.identifier.citedreferenceJ.‐H. Kim, et al, Proc. SPIE Medical Imaging, 4319, 306 ( 2001 ).en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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