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Resistive Switching Memories: Observation of Conductance Quantization in Oxide‐Based Resistive Switching Memory (Adv. Mater. 29/2012)
dc.contributor.authorZhu, Xiaojianen_US
dc.contributor.authorSu, Wenjingen_US
dc.contributor.authorLiu, Yiweien_US
dc.contributor.authorHu, Benlinen_US
dc.contributor.authorPan, Liangen_US
dc.contributor.authorLu, Weien_US
dc.contributor.authorZhang, Jiandien_US
dc.contributor.authorLi, Run‐weien_US
dc.date.accessioned2012-08-09T14:54:32Z
dc.date.available2013-10-01T17:06:31Zen_US
dc.date.issued2012-08-02en_US
dc.identifier.citationZhu, Xiaojian; Su, Wenjing; Liu, Yiwei; Hu, Benlin; Pan, Liang; Lu, Wei; Zhang, Jiandi; Li, Run‐wei (2012). "Resistive Switching Memories: Observation of Conductance Quantization in Oxideâ Based Resistive Switching Memory (Adv. Mater. 29/2012)." Advanced Materials 24(29): 3898-3898. <http://hdl.handle.net/2027.42/92357>en_US
dc.identifier.issn0935-9648en_US
dc.identifier.issn1521-4095en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/92357
dc.publisherWILEY‐VCH Verlagen_US
dc.subject.otherResistive Random Access Memoryen_US
dc.subject.otherOxide‐Based Sandwichen_US
dc.subject.otherQuantum Conductanceen_US
dc.subject.otherResistive Switchingen_US
dc.titleResistive Switching Memories: Observation of Conductance Quantization in Oxide‐Based Resistive Switching Memory (Adv. Mater. 29/2012)en_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelEngineering (General)en_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USAen_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USAen_US
dc.contributor.affiliationotherKey Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR Chinaen_US
dc.contributor.affiliationotherKey Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China.en_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, USAen_US
dc.contributor.affiliationotherZhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of Chinaen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/92357/1/22220_ftp.pdf
dc.identifier.doi10.1002/adma.201290176en_US
dc.identifier.sourceAdvanced Materialsen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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