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Increase in the Figure of Merit by Cd‐Substitution in Sn 1–x Pb x Te and Effect of Pb/Sn Ratio on Thermoelectric Properties
dc.contributor.authorHan, Mi‐kyungen_US
dc.contributor.authorZhou, Xiaoyuenen_US
dc.contributor.authorUher, Ctiraden_US
dc.contributor.authorKim, Sung‐jinen_US
dc.contributor.authorKanatzidis, Mercouri G.en_US
dc.date.accessioned2012-11-07T17:04:37Z
dc.date.available2013-11-15T16:44:23Zen_US
dc.date.issued2012-10en_US
dc.identifier.citationHan, Mi‐kyung ; Zhou, Xiaoyuen; Uher, Ctirad; Kim, Sung‐jin ; Kanatzidis, Mercouri G. (2012). "Increase in the Figure of Merit by Cdâ Substitution in Sn 1â x Pb x Te and Effect of Pb/Sn Ratio on Thermoelectric Properties." Advanced Energy Materials 2(10): 1218-1225. <http://hdl.handle.net/2027.42/94267>en_US
dc.identifier.issn1614-6832en_US
dc.identifier.issn1614-6840en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/94267
dc.description.abstractThe effects of Cd‐doping on the thermoelectric properties of Sn 1–x Pb x Te are investigated and compared to the properties of the corresponding Sn 1–x Pb x Te solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn 1–x Pb x Te. A significant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher figure of merit (ZT) for (Sn 1–x Pb x ) 0.97 Cd 0.03 Te than that of undoped Sn 1–x Pb x Te. The maximum ZT (∼0.7) values are observed for p‐type material with x = 0.36 at 560 K. Much higher values (ZT ∼ 1.2 at 560 K for x = 0.73) are obtained on n‐type samples. By controlling the level of Cd‐substitution and the Pb/Sn ratio it is shown that the thermoelectric properties of the Sn 1–x Pb x Te series can be enhanced significantly. The addition of Cd results in a increase in the power factor and a reduction in the thermal conductivity, leading to a figure of merit (ZT) as high as ∼1.2 at 560 K.en_US
dc.publisherWILEY‐VCH Verlagen_US
dc.subject.otherP‐Type Semiconductorsen_US
dc.subject.otherEnergy Conversionen_US
dc.subject.otherNarrow Gap Semiconductorsen_US
dc.subject.otherPbTeen_US
dc.subject.otherSnTeen_US
dc.titleIncrease in the Figure of Merit by Cd‐Substitution in Sn 1–x Pb x Te and Effect of Pb/Sn Ratio on Thermoelectric Propertiesen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Physics, University of Michigan, Ann Arbor, MI 48109, USAen_US
dc.contributor.affiliationotherDepartment of Chemistry and Nano Science, Ewha Womans University, Seoul 120‐750, Koreaen_US
dc.contributor.affiliationotherDepartment of Chemistry, Northwestern University, Evanston, IL 60208, USA.en_US
dc.contributor.affiliationotherDepartment of Chemistry, Northwestern University, Evanston, IL 60208, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/94267/1/1218_ftp.pdf
dc.identifier.doi10.1002/aenm.201200083en_US
dc.identifier.sourceAdvanced Energy Materialsen_US
dc.identifier.citedreferenceJ. E. Huheey, E. A. Keiter, R. L. Keither, Inorganic Chemistry: Principles of Structure and Reactivity, 4th ed., HarperCollins, New York, USA 1993.en_US
dc.identifier.citedreferencea) J. R. Sootsman, D. Y. Chung, M. G. Kanatzidis, Angew. Chem. Int. Ed. 2009, 48, 8616; b) M. G. Kanatzidis, Chem. Mater. 2010, 22, 648.en_US
dc.identifier.citedreferencea) G. J. Snyder, E. S. Toberer, Nat. Mater. 2008, 7, 105; b) L. E. Bell, Science 2008, 321, 1457; c) C. J. Vineis, A. Shakouri, A. Majumdar, M. G. Kanatzidis, Adv. Mater. 2010, 22, 3970.en_US
dc.identifier.citedreferencea) K. F. Hsu, S. Loo, F. Guo, W. Chen, J. S. Dyck, C. Uher, T. Hogan, E. K. Polychroniadis, M. G. Kanatzidis, Science 2004, 303, 818; b) J. Androulakis, I. Todorov, D. Y. Chung, S. Ballikaya, G. Y. Wang, C. Uher, M. G. Kanatzidis, Phys. Rev. B 2010, 82, 115209; c) M.‐K. Han, J. Androulakis, S. J. Kim, M. G. Kanatzidis, Adv. Energy Mater. 2012, 2, 157; d) L.‐D. Zhao, S.‐H. Lo, J. He, H. Li, K. Biswas, J. Androulakis, C. Wu, T. P. Hogan, D.‐Y. Chung, V. P. Dravid, M. G. Kanatzidis, J. Am. Chem. Soc. 2011, 133, 20476.en_US
dc.identifier.citedreferencea) D. M. Rowe, C. M. Bhandari, Appl. Phys. Lett. 1985, 47, 255; b) J. P. Heremans, V. Jovovic, E. S. Toberer, A. Saramat, K. Kurosaki, A. Charoenphakdee, S. Yamanaka, G. J. Snyder, Science 2008, 321, 554; c) Y. Z. Pei, X. Y. Shi, A. LaLonde, H. Wang, L. D. Chen, G. J. Snyder, Nature 2011, 473, 66.en_US
dc.identifier.citedreferenceC. Wood, Reports on Progress in Physics 1988, 51, 459.en_US
dc.identifier.citedreferencea) M.‐K. Han, K. Hoang, H. J. Kong, R. Pcionek, C. Uher, K. M. Paraskevopoulos, S. D. Mahanti, M. G. Kanatzidis, Chem. Mater. 2008, 20, 3512; b) J. Androulakis, K. ‐F. Hsu, R. Pcionek, H. Kong, C. Uher, J. J. D'Angelo, A. Downey, T. Hogan, M. G. Kanatzidis, Adv. Mater. 2006, 18, 1170; c) A. Gueguen, P. F. P. Poudeu, C. P. Li, S. Moses, C. Uher, J. Q. He, V. Dravid, K. A. Paraskevopoulous, M. G. Kanatzidis, Chem. Mater. 2009, 21, 1683; d) Y. Z. Pei, A. F. May, G. J. Snyder, Adv. Energy Mater. 2011, 1, 291.en_US
dc.identifier.citedreferencea) J. W. Wagner, R. K. Willardson, Trans. Metall. Soc. AIME 1968, 242, 366; b) A. A. Machonis, I. B. Cadoff, Trans. Metall. Soc. AIME 1964, 230, 333; c) E. Abramof, S. O. Ferreira, P. H. O. Rappl, H. Closs, I. N. Bandeira, J. Appl. Phys. 1997, 82, 2405; d) V. Jovovic, S. J. Thiagarajan, J. P. Heremans, T. Komissarova, D. Khokhlov, A. Nicorici, J. Appl. Phys. 2008, 103, 053710.en_US
dc.identifier.citedreferencea) Y. Gelbstein, J. Electronic Mater. 2011, 40, 533; b) I. U. Arachchige, M. G. Kanatzidis, Nano Lett. 2009, 9, 1583; c) M. K. Han, J. Androulakis, S. J. Kim, M. G. Kanatzidis, Adv. Energy Materi. 2012, 2, 157.en_US
dc.identifier.citedreferencea) M. Orihashi, Y. Noda, L.‐D. Chen, T. Goto, T. Hirai, J. Phys. Chem. Solids 2000, 61, 919; b) J. L. Cui, X. Qian, X. B. Zhao, J. Alloys Compds. 2003, 358, 228.en_US
dc.identifier.citedreferenceM. Ocio, Phys. Rev. B 1974, 10, 4274.en_US
dc.identifier.citedreferenceJ. W. Wagner, A. G. Thompson, R. K. Willardson, J. Appl. Phys. 1971, 42, 2515.en_US
dc.identifier.citedreferenceS. Ahmad, S. D. Mahanti, K. Hoang, M. G. Kanatzidis, Phys. Rev. B 2006, 74, 155205.en_US
dc.identifier.citedreferenceK. Ahn, M.‐K. Han, J. Q. He, J. Androulakis, S. Ballikaya, C. Uber, V. P. Dravid, M. G. Kanatzdis, J. Am. Chem. Soc. 2010, 132, 5227.en_US
dc.identifier.citedreferenceY. Gelbstein, Z. Dashevsky, M. P. Dariel, Physica B 2007, 391, 256.en_US
dc.identifier.citedreferenceJ. O. Dimmock, I. Melngailis, A. J. Strauss, Phys. Rev. Lett. 1966, 16, 1193.en_US
dc.identifier.citedreferenceR. F. Bis, J. R. Dixon, J. Appl. Phys. 1969, 40, 1918.en_US
dc.identifier.citedreferenceE. G. Bylander, Mater. Sci. Eng. 1966, 1, 190.en_US
dc.identifier.citedreferenceE. Silberg, A. Zemel, J. Phys. D: Appl. Phys. 1982, 15, 275.en_US
dc.identifier.citedreferenceG. S. Kumar, G. Prasad, R. O. Pohl, J. Mater. Sci. 1993, 28, 4261.en_US
dc.identifier.citedreferenceB. A. Hunter, C. J. Howard, Rietica; Australian Nuclear Science and Technology Organization, Menai, Australia 2000.en_US
dc.identifier.citedreferencea) W. W. Wendlandt, H. G. Hecht, Reflectance Spectroscopy, Interscience Publishers, New York, USA 1966; b) G. Kotuem, Reflectance Spectroscopy, Springer‐Verlag, New York, USA 1969; c) S. P. Tandon, J. P. Gupta, Physica Status Solidi 1970, 38, 363; d) M. G. Kanatzdis, T. H. McCarthy, T. A. Tanzer, L. H. Chen, L. Iordanidis, T. Hogan, C. R. Kannewurf, C. Uher, B. X. Chen, Chem. Mater. 1996, 8, 1465; e) J. H. Liao, M. G. Kanatzdis, Chem. Mater. 1993, 5, 1561.en_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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