Electrical transport in ion beam created InAs nanospikes
dc.contributor.author | Grossklaus, K A. | en_US |
dc.contributor.author | Jokisaari, J R. | en_US |
dc.contributor.author | Pan, X Q. | en_US |
dc.contributor.author | Millunchick, J. M. | en_US |
dc.date.accessioned | 2013-06-28T15:25:49Z | |
dc.date.available | 2013-06-28T15:25:49Z | |
dc.date.issued | 2012 | en_US |
dc.identifier.citation | Grossklaus, K A.; Jokisaari, J R.; Pan, X Q.; Millunchick, J. M. (2012). "Electrical transport in ion beam created InAs nanospikes." Nanotechnology 23(31): 315301. <http://hdl.handle.net/2027.42/98603> | en_US |
dc.identifier.uri | http://stacks.iop.org/0957-4484/23/i=31/a=315301 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/98603 | |
dc.description.abstract | Ion beam irradiation has previously been demonstrated as a method for creating nanowire-like semiconductor nanostructures, but no previous studies have reported on the electrical properties of those structures. In this work we describe the creation and in situ transmission electron microscopy electrical characterization of nanoscale InAs spike structures on both InAs and InP substrates fabricated using a focused ion beam erosion method. Those InAs ‘nanospikes’ are found to possess internal structures with varying amounts of ion damaged and single crystalline material. Nanospike electrical behavior is analyzed with respect to model electronic structures and is similar to cases of barrier limited conduction in nanowires. The different electrical responses of each nanospike are found to be the result of variation in their structure, with the conductivity of InAs nanospikes formed on InAs substrates found to increase with the degree of nanospike core crystallinity. The conductivity of InAs nanospikes formed on InP substrates does not show a dependence on core crystallinity, and may be controlled by the other internal barriers to conduction inherent in that system. | en_US |
dc.publisher | IOP Publishing | en_US |
dc.title | Electrical transport in ion beam created InAs nanospikes | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/98603/1/0957-4484_23_31_315301.pdf | |
dc.identifier.doi | 10.1088/0957-4484/23/31/315301 | en_US |
dc.identifier.source | Nanotechnology | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.