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Influence of Mn dopants on InAs/GaAs quantum dot electronic states
dc.contributor.authorDasika, V. D.en_US
dc.contributor.authorSemichaevsky, A. V.en_US
dc.contributor.authorPetropoulos, J. P.en_US
dc.contributor.authorDibbern, J. C.en_US
dc.contributor.authorDangelewicz, A. M.en_US
dc.contributor.authorHolub, M.en_US
dc.contributor.authorBhattacharya, P. K.en_US
dc.contributor.authorZide, J. M. O.en_US
dc.contributor.authorJohnson, H. T.en_US
dc.contributor.authorGoldman, R. S.en_US
dc.date.accessioned2013-07-03T19:31:23Z
dc.date.available2013-07-03T19:31:23Z
dc.date.issued2011-04-04en_US
dc.identifier.citationDasika, V. D.; Semichaevsky, A. V.; Petropoulos, J. P.; Dibbern, J. C.; Dangelewicz, A. M.; Holub, M.; Bhattacharya, P. K.; Zide, J. M. O.; Johnson, H. T.; Goldman, R. S. (2011). "Influence of Mn dopants on InAs/GaAs quantum dot electronic states." Applied Physics Letters, 98(14): 141907. <http://hdl.handle.net/2027.42/98664>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98664
dc.publisherThe American Institute of Physicsen_US
dc.subjectElectronic Density of Statesen_US
dc.subjectGallium Arsenideen_US
dc.subjectIII-V Semiconductorsen_US
dc.subjectIndium Compoundsen_US
dc.subjectManganeseen_US
dc.subjectScanning Tunnelling Microscopyen_US
dc.subjectScanning Tunnelling Spectroscopyen_US
dc.subjectSemiconductor Quantum Dotsen_US
dc.subjectTight-binding Calculationsen_US
dc.titleInfluence of Mn dopants on InAs/GaAs quantum dot electronic statesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98664/1/ApplPhysLett_98_141907.pdf
dc.identifier.doi10.1063/1.3567510en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.owningcollnamePhysics, Department of


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