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Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO[sub 2] films using Ge-ion implantation and neutron irradiation methods
dc.contributor.authorChen, Q.en_US
dc.contributor.authorLu, T.en_US
dc.contributor.authorXu, M.en_US
dc.contributor.authorMeng, C.en_US
dc.contributor.authorHu, Y.en_US
dc.contributor.authorSun, K.en_US
dc.contributor.authorShlimak, I.en_US
dc.date.accessioned2013-07-03T19:31:27Z
dc.date.available2013-07-03T19:31:27Z
dc.date.issued2011-02-14en_US
dc.identifier.citationChen, Q.; Lu, T.; Xu, M.; Meng, C.; Hu, Y.; Sun, K.; Shlimak, I. (2011). "Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO[sub 2] films using Ge-ion implantation and neutron irradiation methods." Applied Physics Letters, 98(7): 73103. <http://hdl.handle.net/2027.42/98678>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98678
dc.publisherThe American Institute of Physicsen_US
dc.subjectAmorphous Stateen_US
dc.subjectArsenicen_US
dc.subjectElemental Semiconductorsen_US
dc.subjectGermaniumen_US
dc.subjectIon Implantationen_US
dc.subjectMass Transferen_US
dc.subjectMetastable Statesen_US
dc.subjectNanofabricationen_US
dc.subjectNanostructured Materialsen_US
dc.subjectSemiconductor Dopingen_US
dc.subjectSemiconductor Quantum Dotsen_US
dc.titleFabrication of uniform Ge-nanocrystals embedded in amorphous SiO[sub 2] films using Ge-ion implantation and neutron irradiation methodsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98678/1/ApplPhysLett_98_073103.pdf
dc.identifier.doi10.1063/1.3553770en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.owningcollnamePhysics, Department of


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