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Gate control and amplification of magnetoresistance in a three-terminal device
dc.contributor.authorKum, Hyunen_US
dc.contributor.authorJahangir, Shafaten_US
dc.contributor.authorBasu, Debashishen_US
dc.contributor.authorSaha, Dipankaren_US
dc.contributor.authorBhattacharya, Pallaben_US
dc.date.accessioned2013-07-03T19:31:30Z
dc.date.available2013-07-03T19:31:30Z
dc.date.issued2011-10-10en_US
dc.identifier.citationKum, Hyun; Jahangir, Shafat; Basu, Debashish; Saha, Dipankar; Bhattacharya, Pallab (2011). "Gate control and amplification of magnetoresistance in a three-terminal device." Applied Physics Letters, 99(15): 152503. <http://hdl.handle.net/2027.42/98686>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98686
dc.publisherThe American Institute of Physicsen_US
dc.subjectAluminium Compoundsen_US
dc.subjectGallium Arsenideen_US
dc.subjectIII-V Semiconductorsen_US
dc.subjectMagnetoresistanceen_US
dc.subjectManganese Compoundsen_US
dc.subjectSpin Polarised Transporten_US
dc.subjectSpin Valvesen_US
dc.titleGate control and amplification of magnetoresistance in a three-terminal deviceen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98686/1/ApplPhysLett_99_152503.pdf
dc.identifier.doi10.1063/1.3652765en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.owningcollnamePhysics, Department of


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