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Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors

dc.contributor.authorShao, Leien_US
dc.contributor.authorZhang, Mengen_US
dc.contributor.authorBanerjee, Animeshen_US
dc.contributor.authorBhattacharya, Pallaben_US
dc.contributor.authorPipe, Kevin P.en_US
dc.date.accessioned2013-07-03T19:31:31Z
dc.date.available2013-07-03T19:31:31Z
dc.date.issued2011-12-12en_US
dc.identifier.citationShao, Lei; Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab; Pipe, Kevin P. (2011). "Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors." Applied Physics Letters, 99(24): 243507. <http://hdl.handle.net/2027.42/98689>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98689
dc.publisherThe American Institute of Physicsen_US
dc.subjectAluminium Compoundsen_US
dc.subjectGallium Compoundsen_US
dc.subjectHigh Electron Mobility Transistorsen_US
dc.subjectIII-V Semiconductorsen_US
dc.subjectInterdigital Transducersen_US
dc.subjectSurface Acoustic Wave Devicesen_US
dc.subjectSurface Acoustic Wavesen_US
dc.subjectTwo-dimensional Electron Gasen_US
dc.subjectWide Band Gap Semiconductorsen_US
dc.titleEmission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistorsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98689/1/ApplPhysLett_99_243507.pdf
dc.identifier.doi10.1063/1.3665625en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.owningcollnamePhysics, Department of


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