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Room-temperature quantum-dot-like luminescence from site-controlled InGaN quantum disks
dc.contributor.authorLee, L. K.en_US
dc.contributor.authorZhang, Leien_US
dc.contributor.authorDeng, Huien_US
dc.contributor.authorKu, P.-C.en_US
dc.date.accessioned2013-07-03T19:31:32Z
dc.date.available2013-07-03T19:31:32Z
dc.date.issued2011-12-26en_US
dc.identifier.citationLee, L. K.; Zhang, Lei; Deng, Hui; Ku, P.-C. (2011). "Room-temperature quantum-dot-like luminescence from site-controlled InGaN quantum disks." Applied Physics Letters, 99(26): 263105. <http://hdl.handle.net/2027.42/98692>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98692
dc.publisherThe American Institute of Physicsen_US
dc.subjectGallium Compoundsen_US
dc.subjectIII-V Semiconductorsen_US
dc.subjectIndium Compoundsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSemiconductor Quantum Dotsen_US
dc.subjectSpectral Line Shiften_US
dc.subjectThermo-optical Effectsen_US
dc.subjectWide Band Gap Semiconductorsen_US
dc.titleRoom-temperature quantum-dot-like luminescence from site-controlled InGaN quantum disksen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98692/1/ApplPhysLett_99_263105.pdf
dc.identifier.doi10.1063/1.3672441en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.owningcollnamePhysics, Department of


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