Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals
dc.contributor.author | Wood, A. W. | en_US |
dc.contributor.author | Weng, X. | en_US |
dc.contributor.author | Wang, Y. Q. | en_US |
dc.contributor.author | Goldman, R. S. | en_US |
dc.date.accessioned | 2013-07-03T19:31:33Z | |
dc.date.available | 2013-07-03T19:31:33Z | |
dc.date.issued | 2011-08-29 | en_US |
dc.identifier.citation | Wood, A. W.; Weng, X.; Wang, Y. Q.; Goldman, R. S. (2011). "Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals." Applied Physics Letters, 99(9): 93108. <http://hdl.handle.net/2027.42/98698> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/98698 | |
dc.publisher | The American Institute of Physics | en_US |
dc.subject | Amorphous Semiconductors | en_US |
dc.subject | III-V Semiconductors | en_US |
dc.subject | Indium Compounds | en_US |
dc.subject | Ion Implantation | en_US |
dc.subject | Nanofabrication | en_US |
dc.subject | Nanostructured Materials | en_US |
dc.subject | Nucleation | en_US |
dc.subject | Rapid Thermal Annealing | en_US |
dc.subject | Thermodynamics | en_US |
dc.subject | Wide Band Gap Semiconductors | en_US |
dc.title | Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/98698/1/ApplPhysLett_99_093108.pdf | |
dc.identifier.doi | 10.1063/1.3617464 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
dc.owningcollname | Physics, Department of |
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