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Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductors
dc.contributor.authorGrossklaus, K. A.en_US
dc.contributor.authorMillunchick, J. M.en_US
dc.date.accessioned2013-07-03T19:31:35Z
dc.date.available2013-07-03T19:31:35Z
dc.date.issued2011-01-01en_US
dc.identifier.citationGrossklaus, K. A.; Millunchick, J. M. (2011). "Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductors." Journal of Applied Physics, 109(1): 14319. <http://hdl.handle.net/2027.42/98704>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98704
dc.publisherThe American Institute of Physicsen_US
dc.subjectAluminium Compoundsen_US
dc.subjectFocused Ion Beam Technologyen_US
dc.subjectGallium Arsenideen_US
dc.subjectIII-V Semiconductorsen_US
dc.subjectIndium Compoundsen_US
dc.subjectIon Beam Effectsen_US
dc.subjectNanofabricationen_US
dc.subjectNanostructured Materialsen_US
dc.subjectSelf-assemblyen_US
dc.subjectSputter Depositionen_US
dc.subjectSurface Diffusionen_US
dc.subjectSurface Tensionen_US
dc.titleMechanisms of nanodot formation under focused ion beam irradiation in compound semiconductorsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98704/1/JApplPhys_109_014319.pdf
dc.identifier.doi10.1063/1.3530839en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.owningcollnamePhysics, Department of


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