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Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals
dc.contributor.authorWood, A. W.en_US
dc.contributor.authorCollino, R. R.en_US
dc.contributor.authorCardozo, B. L.en_US
dc.contributor.authorNaab, F.en_US
dc.contributor.authorWang, Y. Q.en_US
dc.contributor.authorGoldman, R. S.en_US
dc.date.accessioned2013-07-03T19:31:38Z
dc.date.available2013-07-03T19:31:38Z
dc.date.issued2011-12-15en_US
dc.identifier.citationWood, A. W.; Collino, R. R.; Cardozo, B. L.; Naab, F.; Wang, Y. Q.; Goldman, R. S. (2011). "Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals." Journal of Applied Physics, 110(12): 124307. <http://hdl.handle.net/2027.42/98716>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98716
dc.publisherThe American Institute of Physicsen_US
dc.subjectGallium Arsenideen_US
dc.subjectGallium Compoundsen_US
dc.subjectIII-V Semiconductorsen_US
dc.subjectIon Beam Effectsen_US
dc.subjectIon Implantationen_US
dc.subjectNanofabricationen_US
dc.subjectNanostructured Materialsen_US
dc.subjectNucleationen_US
dc.subjectRapid Thermal Annealingen_US
dc.subjectSemiconductor Dopingen_US
dc.subjectSemiconductor Growthen_US
dc.subjectWide Band Gap Semiconductorsen_US
dc.titleFormation mechanisms of spatially-directed zincblende gallium nitride nanocrystalsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98716/1/JApplPhys_110_124307.pdf
dc.identifier.doi10.1063/1.3665122en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.owningcollnamePhysics, Department of


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