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Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices
dc.contributor.authorHuang, S.en_US
dc.contributor.authorSemichaevsky, A. V.en_US
dc.contributor.authorWebster, L.en_US
dc.contributor.authorJohnson, H. T.en_US
dc.contributor.authorGoldman, R. S.en_US
dc.date.accessioned2013-07-03T19:31:39Z
dc.date.available2013-07-03T19:31:39Z
dc.date.issued2011-10-01en_US
dc.identifier.citationHuang, S.; Semichaevsky, A. V.; Webster, L.; Johnson, H. T.; Goldman, R. S. (2011). "Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices." Journal of Applied Physics, 110(7): 73105. <http://hdl.handle.net/2027.42/98718>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98718
dc.publisherThe American Institute of Physicsen_US
dc.subjectAtomic Force Microscopyen_US
dc.subjectFinite Element Analysisen_US
dc.subjectGallium Arsenideen_US
dc.subjectIII-V Semiconductorsen_US
dc.subjectIndium Compoundsen_US
dc.subjectPoisson Distributionen_US
dc.subjectScanning Tunnelling Microscopyen_US
dc.subjectSchrodinger Equationen_US
dc.subjectSemiconductor Quantum Dotsen_US
dc.subjectSemiconductor Superlatticesen_US
dc.subjectSolar Cellsen_US
dc.subjectWettingen_US
dc.titleInfluence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlatticesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98718/1/JApplPhys_110_073105.pdf
dc.identifier.doi10.1063/1.3631785en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.owningcollnamePhysics, Department of


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