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Mechanisms for sealing of porous low-k SiOCH by combined He and NH[sub 3] plasma treatment
dc.contributor.authorShoeb, Julineen_US
dc.contributor.authorKushner, Mark J.en_US
dc.date.accessioned2013-07-03T19:31:42Z
dc.date.available2013-07-03T19:31:42Z
dc.date.issued2011-09en_US
dc.identifier.citationShoeb, Juline; Kushner, Mark J. (2011). "Mechanisms for sealing of porous low-k SiOCH by combined He and NH[sub 3] plasma treatment." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 29(5): 51305. <http://hdl.handle.net/2027.42/98727>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98727
dc.publisherAVSen_US
dc.subjectDielectric Materialsen_US
dc.subjectDiffusionen_US
dc.subjectOxygen Compoundsen_US
dc.subjectPermittivityen_US
dc.subjectPorous Materialsen_US
dc.subjectSealing Materialsen_US
dc.subjectSilicon Compoundsen_US
dc.subjectSputter Etchingen_US
dc.subjectSurface Cleaningen_US
dc.titleMechanisms for sealing of porous low-k SiOCH by combined He and NH[sub 3] plasma treatmenten_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98727/1/JVA051305.pdf
dc.identifier.doi10.1116/1.3626534en_US
dc.identifier.sourceJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Filmsen_US
dc.owningcollnamePhysics, Department of


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