View Item 

Show simple item record

Modeling of implantation and mixing damage during etching of SiO[sub 2] over Si in fluorocarbon plasmas
dc.contributor.authorWang, Mingmeien_US
dc.contributor.authorKushner, Mark J.en_US
dc.date.accessioned2013-07-03T19:31:42Z
dc.date.available2013-07-03T19:31:42Z
dc.date.issued2011-09en_US
dc.identifier.citationWang, Mingmei; Kushner, Mark J. (2011). "Modeling of implantation and mixing damage during etching of SiO[sub 2] over Si in fluorocarbon plasmas." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 29(5): 51306. <http://hdl.handle.net/2027.42/98728>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98728
dc.publisherAVSen_US
dc.subjectElemental Semiconductorsen_US
dc.subjectIntegrated Circuitsen_US
dc.subjectIon Implantationen_US
dc.subjectMolecular Dynamics Methoden_US
dc.subjectMonte Carlo Methodsen_US
dc.subjectSemiconductor Dopingen_US
dc.subjectSiliconen_US
dc.subjectSilicon Compoundsen_US
dc.subjectSputter Etchingen_US
dc.titleModeling of implantation and mixing damage during etching of SiO[sub 2] over Si in fluorocarbon plasmasen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98728/1/JVA051306.pdf
dc.identifier.doi10.1116/1.3626533en_US
dc.identifier.sourceJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Filmsen_US
dc.owningcollnamePhysics, Department of


Files in this item

Name:
JVA051306.pdf
Size:
6.269MB
Format:
PDF
View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.