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Formation and transfer of GaAsN nanostructure layers

dc.contributor.authorCollino, R. R.en_US
dc.contributor.authorWood, A. W.en_US
dc.contributor.authorEstrada, N. M.en_US
dc.contributor.authorDick, B. B.en_US
dc.contributor.authorRo, H. W.en_US
dc.contributor.authorSoles, C. L.en_US
dc.contributor.authorWang, Y. Q.en_US
dc.contributor.authorThouless, M. D.en_US
dc.contributor.authorGoldman, R. S.en_US
dc.date.accessioned2013-07-03T19:31:43Z
dc.date.available2013-07-03T19:31:43Z
dc.date.issued2011-11en_US
dc.identifier.citationCollino, R. R.; Wood, A. W.; Estrada, N. M.; Dick, B. B.; Ro, H. W.; Soles, C. L.; Wang, Y. Q.; Thouless, M. D.; Goldman, R. S. (2011). "Formation and transfer of GaAsN nanostructure layers." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 29(6): 60601. <http://hdl.handle.net/2027.42/98729>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98729
dc.publisherAVSen_US
dc.subjectBubblesen_US
dc.subjectCracksen_US
dc.subjectGallium Arsenideen_US
dc.subjectIII-V Semiconductorsen_US
dc.subjectIon Implantationen_US
dc.subjectNanofabricationen_US
dc.subjectNanostructured Materialsen_US
dc.subjectRapid Thermal Annealingen_US
dc.subjectSemiconductor Dopingen_US
dc.subjectSemiconductor Growthen_US
dc.subjectWafer Bondingen_US
dc.titleFormation and transfer of GaAsN nanostructure layersen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98729/1/JVA060601.pdf
dc.identifier.doi10.1116/1.3630120en_US
dc.identifier.sourceJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Filmsen_US
dc.owningcollnamePhysics, Department of


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