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Characteristics of a high speed 1.22 mu m tunnel injection p-doped quantum dot excited state laser
dc.contributor.authorLee, Chi-Senen_US
dc.contributor.authorBhattacharya, Pallaben_US
dc.contributor.authorFrost, Thomasen_US
dc.contributor.authorGuo, Weien_US
dc.date.accessioned2013-07-03T19:31:44Z
dc.date.available2013-07-03T19:31:44Z
dc.date.issued2011-01-03en_US
dc.identifier.citationLee, Chi-Sen; Bhattacharya, Pallab; Frost, Thomas; Guo, Wei (2011). "Characteristics of a high speed 1.22 mu m tunnel injection p-doped quantum dot excited state laser." Applied Physics Letters, 98(1): 11103. <http://hdl.handle.net/2027.42/98735>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98735
dc.publisherThe American Institute of Physicsen_US
dc.subjectExcited Statesen_US
dc.subjectIII-V Semiconductorsen_US
dc.subjectIndium Compoundsen_US
dc.subjectOptical Modulationen_US
dc.subjectOptical Saturationen_US
dc.subjectQuantum Dot Lasersen_US
dc.titleCharacteristics of a high speed 1.22 mu m tunnel injection p-doped quantum dot excited state laseren_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98735/1/ApplPhysLett_98_011103.pdf
dc.identifier.doi10.1063/1.3535607en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.owningcollnamePhysics, Department of


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