16.3: AC and DC Bias‐Temperature Stability of Coplanar Homojunction a‐InGaZnO Thin‐Film Transistors

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dc.contributor.author Yu, Eric Kai‐hsiang en_US
dc.contributor.author Abe, Katsumi en_US
dc.contributor.author Kumomi, Hideya en_US
dc.contributor.author Kanicki, Jerzy en_US
dc.date.accessioned 2013-07-08T17:45:34Z
dc.date.available 2014-08-01T19:11:40Z en_US
dc.date.issued 2013-06 en_US
dc.identifier.citation Yu, Eric Kai‐hsiang ; Abe, Katsumi; Kumomi, Hideya; Kanicki, Jerzy (2013). "16.3: AC and DC Biasâ Temperature Stability of Coplanar Homojunction aâ InGaZnO Thinâ Film Transistors." SID Symposium Digest of Technical Papers 44(1). <http://hdl.handle.net/2027.42/98792> en_US
dc.identifier.issn 0097-966X en_US
dc.identifier.issn 2168-0159 en_US
dc.identifier.uri http://hdl.handle.net/2027.42/98792
dc.description.abstract We fabricated coplanar homojunction a‐IGZO TFTs that are highly stable under AC and DC bias‐temperature‐stress. For TFTs of the size W/L = 60μm/10μm, the stress‐induced threshold voltage shifts are all within −0.35 V. A comprehensive investigation of AC BTS stress polarity, pulse width, and duty cycle dependence is presented We find that higher frequency of bipolar AC pulses increases the device instability, while lower duty cycle values have the opposite effect. en_US
dc.publisher Blackwell Publishing Ltd en_US
dc.publisher Wiley Periodicals, Inc. en_US
dc.subject.other Stress en_US
dc.subject.other BTS en_US
dc.subject.other Oxide en_US
dc.subject.other TFT en_US
dc.subject.other A‐IGZO en_US
dc.subject.other Instability en_US
dc.subject.other AC en_US
dc.title 16.3: AC and DC Bias‐Temperature Stability of Coplanar Homojunction a‐InGaZnO Thin‐Film Transistors en_US
dc.type Article en_US
dc.rights.robots IndexNoFollow en_US
dc.subject.hlbsecondlevel Electrical Engineering en_US
dc.subject.hlbtoplevel Engineering en_US
dc.description.peerreviewed Peer Reviewed en_US
dc.contributor.affiliationum Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, United States en_US
dc.contributor.affiliationother Materials and Structures Lab, Tokyo Institute of Technology, Midori‐ku, Yokohama, Japan en_US
dc.description.bitstreamurl http://deepblue.lib.umich.edu/bitstream/2027.42/98792/1/j.2168-0159.2013.tb06171.x.pdf
dc.identifier.doi 10.1002/j.2168-0159.2013.tb06171.x en_US
dc.identifier.source SID Symposium Digest of Technical Papers en_US
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dc.owningcollname Interdisciplinary and Peer-Reviewed
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