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16.3: AC and DC Bias‐Temperature Stability of Coplanar Homojunction a‐InGaZnO Thin‐Film Transistors

dc.contributor.authorYu, Eric Kai‐hsiangen_US
dc.contributor.authorAbe, Katsumien_US
dc.contributor.authorKumomi, Hideyaen_US
dc.contributor.authorKanicki, Jerzyen_US
dc.date.accessioned2013-07-08T17:45:34Z
dc.date.available2014-08-01T19:11:40Zen_US
dc.date.issued2013-06en_US
dc.identifier.citationYu, Eric Kai‐hsiang ; Abe, Katsumi; Kumomi, Hideya; Kanicki, Jerzy (2013). "16.3: AC and DC Biasâ Temperature Stability of Coplanar Homojunction aâ InGaZnO Thinâ Film Transistors." SID Symposium Digest of Technical Papers 44(1). <http://hdl.handle.net/2027.42/98792>en_US
dc.identifier.issn0097-966Xen_US
dc.identifier.issn2168-0159en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98792
dc.description.abstractWe fabricated coplanar homojunction a‐IGZO TFTs that are highly stable under AC and DC bias‐temperature‐stress. For TFTs of the size W/L = 60μm/10μm, the stress‐induced threshold voltage shifts are all within −0.35 V. A comprehensive investigation of AC BTS stress polarity, pulse width, and duty cycle dependence is presented We find that higher frequency of bipolar AC pulses increases the device instability, while lower duty cycle values have the opposite effect.en_US
dc.publisherBlackwell Publishing Ltden_US
dc.publisherWiley Periodicals, Inc.en_US
dc.subject.otherStressen_US
dc.subject.otherBTSen_US
dc.subject.otherOxideen_US
dc.subject.otherTFTen_US
dc.subject.otherA‐IGZOen_US
dc.subject.otherInstabilityen_US
dc.subject.otherACen_US
dc.title16.3: AC and DC Bias‐Temperature Stability of Coplanar Homojunction a‐InGaZnO Thin‐Film Transistorsen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelElectrical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, United Statesen_US
dc.contributor.affiliationotherMaterials and Structures Lab, Tokyo Institute of Technology, Midori‐ku, Yokohama, Japanen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98792/1/j.2168-0159.2013.tb06171.x.pdf
dc.identifier.doi10.1002/j.2168-0159.2013.tb06171.xen_US
dc.identifier.sourceSID Symposium Digest of Technical Papersen_US
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dc.identifier.citedreferenceT.‐C. Fung, K. Abe, H. Kumom, and J. Kanicki, “ Electrical Instability of RF Sputter Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors ”, J. Display Technol. 5, 452 ( 2009 ).en_US
dc.identifier.citedreferenceJ. Y. Kwon, J. S. Sung, K. S. Son, T. S. Kim, M. K. Ryu, K. B. Park, Y. S. Park, S. Y. Lee, and J. M. Kim, “ GaInZnO TFT for active matrix display,” in AM‐FPD '08 Dig. Tech. Papers, 2008, p. 287 – 290.en_US
dc.identifier.citedreferenceY. Ohto, Y. Chikama, T. Hara, Y. Mizuno, T. Aita, M. Takei, M. Suzuki, O. Nakagawa, Y. Harumoto, H. Nishik, and N. Kimura, “ Amorphous In‐Ga‐Zn‐O TFT with high reliability,” in IDW '09 (The 16 th International Display Workshop), 1685 – 1688 ( 2009 ).en_US
dc.identifier.citedreferenceA. Suresh and J. F. Muth, “ Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors ”, Appl. Phys. Lett. 93, 093504 ( 2008 ).en_US
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dc.identifier.citedreferenceT.‐C. Fung, K. Abe, H. Kumom, and J. Kanicki, “ DC/AC Electrical of R.F. Sputter Amorphous In‐Ga‐Zn‐O TFTs ”, In SID Int. Symp. Dig. Tech. Papers 40, 1117 ( 2009 ).en_US
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dc.owningcollnameInterdisciplinary and Peer-Reviewed


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