16.3: AC and DC Bias‐Temperature Stability of Coplanar Homojunction a‐InGaZnO Thin‐Film Transistors
dc.contributor.author | Yu, Eric Kai‐hsiang | en_US |
dc.contributor.author | Abe, Katsumi | en_US |
dc.contributor.author | Kumomi, Hideya | en_US |
dc.contributor.author | Kanicki, Jerzy | en_US |
dc.date.accessioned | 2013-07-08T17:45:34Z | |
dc.date.available | 2014-08-01T19:11:40Z | en_US |
dc.date.issued | 2013-06 | en_US |
dc.identifier.citation | Yu, Eric Kai‐hsiang ; Abe, Katsumi; Kumomi, Hideya; Kanicki, Jerzy (2013). "16.3: AC and DC Biasâ Temperature Stability of Coplanar Homojunction aâ InGaZnO Thinâ Film Transistors." SID Symposium Digest of Technical Papers 44(1). <http://hdl.handle.net/2027.42/98792> | en_US |
dc.identifier.issn | 0097-966X | en_US |
dc.identifier.issn | 2168-0159 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/98792 | |
dc.description.abstract | We fabricated coplanar homojunction a‐IGZO TFTs that are highly stable under AC and DC bias‐temperature‐stress. For TFTs of the size W/L = 60μm/10μm, the stress‐induced threshold voltage shifts are all within −0.35 V. A comprehensive investigation of AC BTS stress polarity, pulse width, and duty cycle dependence is presented We find that higher frequency of bipolar AC pulses increases the device instability, while lower duty cycle values have the opposite effect. | en_US |
dc.publisher | Blackwell Publishing Ltd | en_US |
dc.publisher | Wiley Periodicals, Inc. | en_US |
dc.subject.other | Stress | en_US |
dc.subject.other | BTS | en_US |
dc.subject.other | Oxide | en_US |
dc.subject.other | TFT | en_US |
dc.subject.other | A‐IGZO | en_US |
dc.subject.other | Instability | en_US |
dc.subject.other | AC | en_US |
dc.title | 16.3: AC and DC Bias‐Temperature Stability of Coplanar Homojunction a‐InGaZnO Thin‐Film Transistors | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, United States | en_US |
dc.contributor.affiliationother | Materials and Structures Lab, Tokyo Institute of Technology, Midori‐ku, Yokohama, Japan | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/98792/1/j.2168-0159.2013.tb06171.x.pdf | |
dc.identifier.doi | 10.1002/j.2168-0159.2013.tb06171.x | en_US |
dc.identifier.source | SID Symposium Digest of Technical Papers | en_US |
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dc.identifier.citedreference | T.‐C. Fung, K. Abe, H. Kumom, and J. Kanicki, “ DC/AC Electrical of R.F. Sputter Amorphous In‐Ga‐Zn‐O TFTs ”, In SID Int. Symp. Dig. Tech. Papers 40, 1117 ( 2009 ). | en_US |
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dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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