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C‐V and I‐V characteristics of quantum well varactors

dc.contributor.authorSun, J. P.en_US
dc.contributor.authorMains, R. K.en_US
dc.contributor.authorChen, W. L.en_US
dc.contributor.authorEast, Jack Royen_US
dc.contributor.authorHaddad, George I.en_US
dc.date.accessioned2010-05-06T20:34:06Z
dc.date.available2010-05-06T20:34:06Z
dc.date.issued1992-09-15en_US
dc.identifier.citationSun, J. P.; Mains, R. K.; Chen, W. L.; East, J. R.; Haddad, G. I. (1992). "C‐V and I‐V characteristics of quantum well varactors." Journal of Applied Physics 72(6): 2340-2346. <http://hdl.handle.net/2027.42/69415>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69415
dc.description.abstractA theoretical model for quantum well varactors is presented. The model is used to calculate the device C‐V and I‐V characteristics and very good agreement has been found between the calculated and measured results. Based on the model, a triple barrier double well varactor has been designed and fabricated. A very high capacitance ratio within a very small bias range is achieved, as designed. Details of the design calculations and experimental results are presented.en_US
dc.format.extent3102 bytes
dc.format.extent810574 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleC‐V and I‐V characteristics of quantum well varactorsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High‐Frequency Microelectronics, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69415/2/JAPIAU-72-6-2340-1.pdf
dc.identifier.doi10.1063/1.352322en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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