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Zone Leveling and Crystal Growth of Peritectic Compounds
dc.contributor.authorMason, Donald R.en_US
dc.contributor.authorCook, J. Stanleyen_US
dc.date.accessioned2010-05-06T20:44:16Z
dc.date.available2010-05-06T20:44:16Z
dc.date.issued1961-03en_US
dc.identifier.citationMason, Donald R.; Cook, J. Stanley (1961). "Zone Leveling and Crystal Growth of Peritectic Compounds." Journal of Applied Physics 32(3): 475-477. <http://hdl.handle.net/2027.42/69526>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/69526
dc.description.abstractHomogeneous samples of peritectic semiconducting compounds have been prepared for optical and electrical characterization by combining zone leveling concepts with Bridgeman crystal growth techniques. Proper temperature distribution in the zone leveling equipment must be established on the basis of the phase diagram for the material, and by considering the rate process accompanying solidification and crystal growth. The ingots produced by this method are substantially uniform and homogeneous in composition, whereas normally frozen or Czochralski‐grown crystals contain concentration gradients.en_US
dc.format.extent3102 bytes
dc.format.extent229140 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleZone Leveling and Crystal Growth of Peritectic Compoundsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Chemical and Metallurgical Engineering, University of Michigan, Ann Arbor, Michiganen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/69526/2/JAPIAU-32-3-475-1.pdf
dc.identifier.doi10.1063/1.1736027en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.identifier.citedreferenceW. G. Pfann, Zone Melting (John Wiley & Sons, Inc., New York, 1958).en_US
dc.identifier.citedreferenceC. H. L. Goodman, Research (London) 7, 168 (1954).en_US
dc.identifier.citedreferenceL. Thomassen and D. R. Mason, J. Electrochem. Soc. 106, 206c (abstract) (1959).en_US
dc.identifier.citedreferenceJ. A. Burton, R. C. Prim, and W. P. Slichter (Part I) J. Chem. Phys. 21, 1987 (1953); J. A. Burton, E. D. Kolb, W. P. Slichter, and J. D. Struthers (Part II), 21, 1991 (1953).en_US
dc.identifier.citedreferenceW. A. Tiller, K. A. Jackson, J. W. Rutter, and B. Chalmers, Acta Met. 1, 428 (1953). a See also G. F. Boiling and W. A. Tiller, J. Appl. Phys. 31, 2040 (1960).en_US
dc.identifier.citedreferenceD. F. Edwards and D. F. O’Kane, Bull. Am. Phys. Soc. Ser. II 5, 78 (1960).en_US
dc.identifier.citedreferenceM. Hansen, Constitution of Binary Alloys (McGraw‐Hill Book Company, Inc., New York, 1958), 2nd ed., p. 863.en_US
dc.identifier.citedreferenceThis work will be reported at a later date.en_US
dc.owningcollnamePhysics, Department of


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