Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides

Abstract

The electro‐optic effect and phase modulation in In0.2 Ga0.8 As/GaAs multiple quantum wells have been experimentally studied for the first time. The experiments were done with 1.06 and 1.15 μm photoexcitation which are, respectively, 25 and 115 meV below the electron–heavy hole excitonic resonance. Strong quadratic electro‐optic effect was observed near the excitonic edge in addition to the linear effect. These are characterized by r63 =−1.85×10−19 m/V and (R33 −R13 )=2.9×10−19 m2 /V2 . In addition, we observe a dispersion in the value of r63 . The relative phase shifts are higher in the strained system at 1.06 μm than in lattice‐matched GaAs/AlGaAs.