GaAs junction field effect transitors for low‐temperature environments

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Forrest, S. R.; Sanders, T. M.

1978-11

Citation: Forrest, S. R.; Sanders, T. M. (1978). "GaAs junction field effect transitors for low‐temperature environments." Review of Scientific Instruments 49(11): 1603-1604. <http://hdl.handle.net/2027.42/70375>

Abstract: Thermal, electrical, and noise characteristics of a GaAs junction FET are described. Low voltage noise [1.5±0.2 nV/(Hz)1/2 at T =4.2 K] and insensitivity to temperature change in the range 1.3⩽T ⩽300 K make it suitable for low‐temperature applications.

DOIs: 10.1063/1.1135322

PMID: 18699015

URI: http://www.ncbi.nlm.nih.gov/sites/entrez?cmd=retrieve&db=pubmed&list_uids=18699015&dopt=citation

Handle: http://hdl.handle.net/2027.42/70375

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