Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display
dc.contributor.author | Hong, Yongtaek | en_US |
dc.contributor.author | Nahm, Jeong-Yeop | en_US |
dc.contributor.author | Kanicki, Jerzy | en_US |
dc.date.accessioned | 2010-05-06T22:12:10Z | |
dc.date.available | 2010-05-06T22:12:10Z | |
dc.date.issued | 2003-10-20 | en_US |
dc.identifier.citation | Hong, Yongtaek; Nahm, Jeong-Yeop; Kanicki, Jerzy (2003). "Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display." Applied Physics Letters 83(16): 3233-3235. <http://hdl.handle.net/2027.42/70464> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70464 | |
dc.description.abstract | We report on opto-electrical properties of a current-driven 200 dpi active-matrix organic polymer red light-emitting display (AM–PLED) based on four hydrogenated amorphous silicon thin-film transistor pixel electrode circuits. The AM–PLED luminance and effective light-emission efficiency were 30 cd/m230cd/m2 and 0.3 cd/A, respectively, at the data current equal to 25 mA. The display electroluminescent spectrum has a peak located at and the full width at half maximum value of 644 and 95 nm, respectively, and Commission Internationale de l’Eclairage color coordinates of (0.66,0.33). © 2003 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 223317 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid-State Electronics Laboratory, Department of EECS, University of Michigan, Ann Arbor, Michigan 48105 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70464/2/APPLAB-83-16-3233-1.pdf | |
dc.identifier.doi | 10.1063/1.1617372 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.identifier.citedreference | J. Kanicki, J.-H. Kim, J.-Y. Nahm, Y. He, and R. Hattori, 21st International Display Conference, 16–19 October 2001 Nagoya, Japan (Society for Information Display, San Jose, CA, 2001), p. 315. | en_US |
dc.identifier.citedreference | Y. Hong and J. Kanicki, Rev. Sci. Instrum. RSINAK74, 3572 (2003). | en_US |
dc.identifier.citedreference | Y. Hong and J. Kanicki, 21st International Display Conference, 16–19 October 2001 Nagoya, Japan (Society for Information Display, San Jose, CA, 2001), p 1443. | en_US |
dc.owningcollname | Physics, Department of |
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