Highly anisotropic crystal growth and thermoelectric properties of K2Bi8−xSbxSe13K2Bi8−xSbxSe13 solid solutions: Band gap anomaly at low x
dc.contributor.author | Kyratsi, Theodora | en_US |
dc.contributor.author | Dyck, Jeffrey S. | en_US |
dc.contributor.author | Chen, Wei | en_US |
dc.contributor.author | Chung, Duck-Young | en_US |
dc.contributor.author | Uher, Ctirad | en_US |
dc.contributor.author | Paraskevopoulos, Konstantinos M. | en_US |
dc.contributor.author | Kanatzidis, Mercouri G. | en_US |
dc.date.accessioned | 2010-05-06T22:16:57Z | |
dc.date.available | 2010-05-06T22:16:57Z | |
dc.date.issued | 2002-07-15 | en_US |
dc.identifier.citation | Kyratsi, Theodora; Dyck, Jeffrey S.; Chen, Wei; Chung, Duck-Young; Uher, Ctirad; Paraskevopoulos, Konstantinos M.; Kanatzidis, Mercouri G. (2002). "Highly anisotropic crystal growth and thermoelectric properties of K2Bi8−xSbxSe13K2Bi8−xSbxSe13 solid solutions: Band gap anomaly at low x." Journal of Applied Physics 92(2): 965-975. <http://hdl.handle.net/2027.42/70515> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70515 | |
dc.description.abstract | The thermoelectric properties of solid solutions of the type β-K2Bi8−xSbxSe13β-K2Bi8−xSbxSe13 (0<x<8)(0<x<8) were studied with respect to thermal behavior, band gap variation, and charge transport properties as a function of x. At x values between 0 and 1.5, the energy band gap is observed to decrease (anomalous) before it widens with increasing x values as would be expected. For selected members of the solid solutions, the Bridgman technique was applied to obtain well-grown oriented ingots that were used to measure the thermal conductivity and charge transport properties in different growth directions. The measurements showed a strong anisotropy in thermoelectric properties with the largest anisotropy observed in the electrical conductivity. Lattice thermal conductivities of the selected solid solutions were observed to decrease when the x value increases. Preliminary doping studies on the x=1.6x=1.6 member were carried out and it was shown that it is possible to significantly increase the power factor. © 2002 American Institute of Physics. | en_US |
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dc.format.extent | 396877 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Highly anisotropic crystal growth and thermoelectric properties of K2Bi8−xSbxSe13K2Bi8−xSbxSe13 solid solutions: Band gap anomaly at low x | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Chemistry, Michigan State University, East Lansing, Michigan 48824 | en_US |
dc.contributor.affiliationum | Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationum | Department of Chemistry, Michigan State University, East Lansing, Michigan 48824 | en_US |
dc.contributor.affiliationum | Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationum | Department of Chemistry, Michigan State University, East Lansing, Michigan 48824 | en_US |
dc.contributor.affiliationother | Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70515/2/JAPIAU-92-2-965-1.pdf | |
dc.identifier.doi | 10.1063/1.1481967 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.identifier.citedreference | In Ref. 6, β-K2Bi8Se13β-K2Bi8Se13 electrical conductivity measured on ingot is ∼30 S/cm, while the electrical conductivity measured on single crystal is ∼250 S/cm. This significant difference is attributed to macroscopic imperfections of the ingot. | en_US |
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dc.owningcollname | Physics, Department of |
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