Small‐signal modulation and temperature dependence of the tunneling injection laser

Abstract

Recently, we demonstrated a novel laser structure, called the tunneling injection laser, where the electrons are injected into the active lasing quantum well region via tunneling. High performance results for this device have now been demonstrated. A To of 160 K was found from temperature‐dependent measurements (25–70 °C). High differential gain (5.5×10−16 cm2) and modulation bandwidth (12.5 GHz) have been attained relative to other single quantum well lasers.