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Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots
Kim, K.; Norris, T. B.; Ghosh, S.; Singh, J.; Bhattacharya, P.
2003-03-24
Citation:
Kim, K.; Norris, T. B.; Ghosh, S.; Singh, J.; Bhattacharya, P. (2003). "Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots." Applied Physics Letters 82(12): 1959-1961. <http://hdl.handle.net/2027.42/71141>
Abstract:
Using femtosecond three-pulse pump–probe spectroscopy, we investigated the transparency condition for the ground and first excited states in self-organized In0.4Ga0.6AsIn0.4Ga0.6As quantum dots at different temperatures and wavelengths. The temperature-dependent behavior of the transparency condition is consistent with calculations using a multilevel model with a large density of states in the quantum-well reservoir. The twofold spatial degeneracy of the first excited state and the temperature dependence of the thermal equilibrium processes were experimentally observed. © 2003 American Institute of Physics.
DOIs:
10.1063/1.1563732
Handle:
http://hdl.handle.net/2027.42/71141
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