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Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots

dc.contributor.authorKim, K.en_US
dc.contributor.authorNorris, Theodore B.en_US
dc.contributor.authorGhosh, S.en_US
dc.contributor.authorSingh, J.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T23:16:13Z
dc.date.available2010-05-06T23:16:13Z
dc.date.issued2003-03-24en_US
dc.identifier.citationKim, K.; Norris, T. B.; Ghosh, S.; Singh, J.; Bhattacharya, P. (2003). "Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots." Applied Physics Letters 82(12): 1959-1961. <http://hdl.handle.net/2027.42/71141>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71141
dc.description.abstractUsing femtosecond three-pulse pump–probe spectroscopy, we investigated the transparency condition for the ground and first excited states in self-organized In0.4Ga0.6AsIn0.4Ga0.6As quantum dots at different temperatures and wavelengths. The temperature-dependent behavior of the transparency condition is consistent with calculations using a multilevel model with a large density of states in the quantum-well reservoir. The twofold spatial degeneracy of the first excited state and the temperature dependence of the thermal equilibrium processes were experimentally observed. © 2003 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent62242 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLevel degeneracy and temperature-dependent carrier distributions in self-organized quantum dotsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for Ultrafast Optical Science, Department of Electrical Engineering and Computer Science, The University of Michigan, 2200 Bonisteel Boulevard, Ann Arbor, Michigan 48109-2099en_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71141/2/APPLAB-82-12-1959-1.pdf
dc.identifier.doi10.1063/1.1563732en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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