NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study
dc.contributor.author | Nath, R. | en_US |
dc.contributor.author | Soo, C. W. | en_US |
dc.contributor.author | Boothroyd, C. B. | en_US |
dc.contributor.author | Yeadon, M. | en_US |
dc.contributor.author | Chi, D. Z. | en_US |
dc.contributor.author | Sun, H. P. | en_US |
dc.contributor.author | Chen, Y. B. | en_US |
dc.contributor.author | Pan, Xiaoqing | en_US |
dc.contributor.author | Foo, Y. L. | en_US |
dc.date.accessioned | 2011-11-15T16:10:03Z | |
dc.date.available | 2011-11-15T16:10:03Z | |
dc.date.issued | 2005-05-16 | en_US |
dc.identifier.citation | Nath, R.; Soo, C. W.; Boothroyd, C. B.; Yeadon, M.; Chi, D. Z.; Sun, H. P.; Chen, Y. B.; Pan, X. Q.; Foo, Y. L. (2005). "NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study." Applied Physics Letters 86(20): 201908-201908-3. <http://hdl.handle.net/2027.42/87854> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87854 | |
dc.description.abstract | We use an ultrahigh-vacuum transmission-electron microscopy, equipped with an electron-beam evaporator directed at a heating stage in the pole piece, to follow the reaction pathway of Ni on Ge(001) substrate at 300 °C. Using reactive deposition, we illustrate that epitaxial orthorhombic NiGe (a = 5.381 Åa=5.381Å, b = 3.428 Åb=3.428Å, and c = 5.811 Åc=5.811Å) phase can be grown directly without the initial formation of metal-rich Ni2GeNi2Ge phase. The epitaxial orientation of the NiGe islands and the underlying Ge(001) substrate were found to be NiGe(01)//Ge(001)NiGe(1¯01)∕∕Ge(001) and NiGe[010]//Ge[110]NiGe[010]∕∕Ge[110]. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 | en_US |
dc.contributor.affiliationother | Institute of Materials Research and Engineering, 3 Research Link, Singapore S117602, Singapore | en_US |
dc.contributor.affiliationother | Institute of Materials Research and Engineering, 3 Research Link, Singapore S117602, Singapore | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87854/2/201908_1.pdf | |
dc.identifier.doi | 10.1063/1.1929100 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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